Light emitting diode module for surface mount technology and method of manufacturing the same

• US 9,831,401 B2
• Filed: 12/13/2016
• Issued: 11/28/2017
• Est. Priority Date: 07/02/2012
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Jang, Jong Min, Roh, Won Young, Suh, Dae Woong, Kang, Min Woo, Lee, Joon Sub, Kim, Hyun A, Kim, Kyoung Wan, Kim, Chang Yeon
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US15/377,731
• Publication Number:
  US 20170092821A1
• Time in Patent Office: 350 Days
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05173 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/0518 Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05671 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/0568 : Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/06051 : Bonding areas having different shapes
• CPC Class Codes: H01L 2224/0616 : Random array, i.e. array with no symmetry
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/293 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32227 : the layer connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/3316 : Random layout, i.e. layout with no symmetry
• CPC Class Codes: H01L 2224/83399 : Material
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 24/00 : Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/053 : Oxides composed of metals from groups of the periodic table
• CPC Class Codes: H01L 2924/0542 : 12th Group
• CPC Class Codes: H01L 2933/0016 : relating to electrodes
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

Claims

1. A light emitting diode (LED) comprising:

a substrate;

a stacked structure including a first semiconductor layer, an active layer formed over the first semiconductor layer and a second semiconductor layer formed over the active layer;

a first conductive layer formed over the stacked structure to cover an outer side wall of the stacked structure;

a first insulating layer formed between the stacked structure and the first conductive layer to prevent the first conductive layer from contacting the outer side wall of the stacked structure;

a first pad formed over the stacked structure; and

a second pad formed over the stacked structure,

wherein the first conductive layer is in ohmic-contact with a portion of the first semiconductor layer, the portion of the first semiconductor layer is outside of the outer side wall of the stacked structure.

2. The LED of claim 1, wherein the first conductive layer covers only a portion of the side wall of the stacked structure along a first direction.

3. The LED of claim 1, wherein the outer side wall of the stacked structure is at an inclination angle with respect to a surface of the first semiconductor layer.

4. The LED of claim 1, further comprising a second conductive layer formed over the second semiconductor layer,

wherein the first insulation layer covers an inner side wall of the stacked structure and is shaped to expose selective portions of the second conductive layer and the first semiconductor layer.

5. The LED of claim 1, further comprising a second insulation layer formed over the first conductive layer and shaped to expose selective portions of the first conductive layer.

6. The LED of claim 2, wherein the first conductive layer covers an entirety of the side wall of the stacked structure along a second direction perpendicular to the first direction.

7. The LED of claim 4, wherein the first conductive layer is in ohmic-contact with the selective portions to expose the first semiconductor layer.

8. The LED of claim 5, wherein end portions the first or second insulation layers contact a surface of substrate.

9. A light emitting diode (LED) comprising:

a substrate;

a stacked structure including a first semiconductor layer, an active layer formed over the first semiconductor layer and a second semiconductor layer formed over the active layer;

a first conductive layer formed over the stacked structure to cover an outer side wall of the stacked structure;

a first insulating layer formed between the stacked structure and the first conductive layer to prevent the first conductive layer from contacting the outer side wall of the stacked structure;

a first pad formed over the stacked structure; and

a second pad formed over the stacked structure, and

wherein the LED further comprises a phosphor structure covering the outer side wall of the stacked structure.

10. The LED of claim 9, wherein the phosphor structure includes multiple layers.

11. The LED of claim 9, wherein the phosphor structure includes a first portion on the substrate having a first thickness that is substantially constant and a second portion having a second thickness that varies along the outer side wall of the staked structure.

12. The LED of claim 9, further comprising a conductive adhesive that is electrically connected to the first semiconductor layer or the second semiconductor layer, wherein the phosphor layer does not contact with the conductive adhesive.

13. The LED of claim 11, wherein the second thickness varies according to a shape of the outer side wall.

14. The LED of claim 11, wherein the second thickness is thicker than the first thickness.

15. A light emitting structure comprising:

a first semiconductor layer having a first side wall along a first direction and a second side wall along a second direction;

a second semiconductor layer formed over the first semiconductor layer;

an active layer disposed between the first semiconductor layer and the second semiconductor layer;

a first insulation layer formed to cover side walls of the second semiconductor layer and the active layer and exposing the first semiconductor layer;

a first conductive layer formed over the first insulation layer and covering side walls of the second semiconductor layer and the active layer;

a second conductive layer formed between the first conductive layer and the second semiconductor layer;

a second insulation layer formed on the first conductive layer and configured to surround end portion of the first conductive layer;

a first pad formed over the first conductive layer and electrically connected to the second semiconductor layer; and

a second pad formed over the first conductive layer and electrically connected to the first semiconductor layer.

16. The light emitting structure of claim 15, wherein the first conductive layer does not cover the first side wall.

17. The light emitting structure of claim 15, further comprising a substrate, wherein the first side wall of the first semiconductor layer flushes with a side surface of the substrate.

18. The light emitting structure of claim 15, wherein the first pad and/or the second pad include a double layered structure including at least two layers.

19. The LED of claim 15, further comprising a wavelength layer covering the first side walls of the first semiconductor layer and side walls of the second semiconductor layer and the active layer.

20. The LED of claim 15, wherein the first direction is perpendicular to the second direction.

21. The light emitting structure of claim 16, wherein the first side wall is at an inclination angle with respect to a surface of the first semiconductor layer.

22. The light emitting structure of claim 21, wherein each of the first side walls of the first semiconductor layer has an inclined angle with respect to the second side wall of the first semiconductor layer.