Magnetic memory element with composite fixed layer

• US 9,831,421 B2
• Filed: 07/13/2015
• Issued: 11/28/2017
• Est. Priority Date: 09/14/2010
• Status: Active Grant

• Current Assignee: Avalanche Technology Incorporated
• Original Assignee: Avalanche Technology Incorporated
• Inventors: Wang, Zihui, Gan, Huadong, Huai, Yiming, Zhou, Yuchen, Wang, Xiaobin, Yen, Bing K., Hao, Xiaojie
• Primary Examiner(s): Armand, Marc
• Application Number:
  US14/797,458
• Publication Number:
  US 20150325783A1
• Time in Patent Office: 869 Days
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 10/329 Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H01L 29/66984 Devices using spin polarized carriers
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

The present invention is directed to an MTJ memory element including a magnetic free layer structure which includes one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer.

Claims

1. A magnetic tunnel junction (MTJ) memory element comprising:

a seed layer; and

a magnetic fixed layer including a first magnetic fixed sublayer formed adjacent to said seed layer and a second magnetic fixed sublayer separated from said first magnetic fixed sublayer by a first perpendicular enhancement layer, said first and second magnetic fixed sublayers having a first fixed magnetization direction substantially perpendicular to layer planes thereof,

wherein said second magnetic fixed sublayer has a multilayer structure formed by interleaving layers of a first type material with layers of a second type material, at least one of said first and second type materials being magnetic.

2. The MTJ memory element according to claim 1, wherein said seed layer is made of a material comprising nickel and a transition metal with said transition metal being tantalum, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, or tungsten.

3. The MTJ memory element according to claim 1, wherein said seed layer is made of a material comprising cobalt and a transition metal with said transition metal being tantalum, chromium, titanium, zirconium, hafnium, vanadium, niobium, molybdenum, or tungsten.

4. The MTJ memory element according to claim 1, wherein said seed layer is made of a material comprising iron and a transition metal with said transition metal being tantalum, chromium, titanium, zirconium, hafnium, vanadium, niobium, molybdenum, or tungsten.

5. The MTJ memory element according to claim 1, wherein said seed layer is made of a material comprising nickel and tantalum.

6. The MTJ memory element according to claim 1, wherein said first magnetic fixed sublayer has a multilayer structure formed by interleaving layers of a third type material with layers of a fourth type material, at least one of said third and fourth type materials being magnetic.

7. The MTJ memory element according to claim 1, wherein said first type material is Co or CoFe, said second type material is Ni, Pd, Pt, or any combination thereof.

8. The MTJ memory element according to claim 1, wherein said first perpendicular enhancement layer is made of chromium.

9. The MTJ memory element according to claim 1, wherein said first perpendicular enhancement layer is made of tantalum, hafnium, titanium, zirconium, vanadium, niobium, molybdenum, or tungsten.

10. The MTJ memory element according to claim 6, wherein said third type material is Co or CoFe, said fourth type material is Ni, Pd, Pt, or any combination thereof.

11. A magnetic tunnel junction (MTJ) memory element comprising:

a seed layer;

a magnetic fixed layer including a first magnetic fixed sublayer formed adjacent to said seed layer and a second magnetic fixed sublayer separated from said first magnetic fixed sublayer by a first perpendicular enhancement layer, said first and second magnetic fixed sublayers having a first fixed magnetization direction substantially perpendicular to layer planes thereof;

an anti-ferromagnetic coupling layer formed adjacent to said second magnetic fixed sublayer opposite said first perpendicular enhancement layer;

a magnetic reference layer structure formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic fixed sublayer, said magnetic reference layer structure including one or more magnetic reference layers having a second fixed magnetization direction that is substantially perpendicular to layer planes thereof and is substantially opposite to said first fixed magnetization direction;

an insulating tunnel junction layer formed adjacent to said magnetic reference layer structure; and

a magnetic free layer structure formed adjacent to said insulating tunnel junction layer opposite said magnetic reference layer structure, said magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof.

12. The MTJ memory element according to claim 11, wherein said magnetic reference layer structure includes a first magnetic reference layer formed adjacent to said anti-ferromagnetic coupling layer, a second magnetic reference layer formed adjacent to said insulating tunnel junction layer, and a second perpendicular enhancement layer formed between said first and second magnetic reference layers, said first and second magnetic reference layers having said second fixed magnetization direction substantially perpendicular to layer planes thereof.

13. The MTJ memory element according to claim 11, wherein said magnetic reference layer structure includes a first magnetic reference layer formed adjacent to said anti-ferromagnetic coupling layer and a second magnetic reference layer formed adjacent to said insulating tunnel junction layer, said first and second magnetic reference layers having said second fixed magnetization direction substantially perpendicular to layer planes thereof.

14. The MTJ memory element according to claim 11, wherein said first perpendicular enhancement layer is made of chromium.

15. The MTJ memory element according to claim 11, wherein said first perpendicular enhancement layer is made of a material selected from the group consisting of tantalum, hafnium, titanium, zirconium, vanadium, niobium, molybdenum, and tungsten.

16. The MTJ memory element according to claim 11, wherein said first magnetic fixed sublayer has a multilayer structure formed by interleaving layers of a first type material with layers of a second type material, at least one of said first and second type materials being magnetic.

17. The MTJ memory element according to claim 11, wherein said second magnetic fixed sublayer has a multilayer structure formed by interleaving layers of a third type material with layers of a fourth type material, at least one of said third and fourth type materials being magnetic.

18. The MTJ memory element according to claim 12, wherein said second perpendicular enhancement layer is made of tantalum, hafnium, molybdenum, or tungsten.

19. The MTJ memory element according to claim 12, wherein said first magnetic reference layer is made of a material comprising cobalt and platinum.

20. The MTJ memory element according to claim 12, wherein said first magnetic reference layer has a multilayer structure formed by interleaving layers of a fifth type material with layers of a sixth type material, at least one of said fifth and sixth type materials being magnetic.

21. The MTJ memory element according to claim 12, wherein said second magnetic reference layer is made of a material comprising cobalt, iron, and boron.

22. The MTJ memory element according to claim 13, wherein first magnetic reference layer is made of a material comprising cobalt, iron, and tantalum.

23. The MTJ memory element according to claim 13, wherein second magnetic reference layer is made of a material comprising cobalt, iron, and boron.

24. The MTJ memory element according to claim 20, wherein said fifth type material is Co or CoFe, said sixth type material is Ni, Pd, Pt, or any combination thereof.