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Magnetic memory element with composite fixed layer

  • US 9,831,421 B2
  • Filed: 07/13/2015
  • Issued: 11/28/2017
  • Est. Priority Date: 09/14/2010
  • Status: Active Grant
First Claim
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1. A magnetic tunnel junction (MTJ) memory element comprising:

  • a seed layer; and

    a magnetic fixed layer including a first magnetic fixed sublayer formed adjacent to said seed layer and a second magnetic fixed sublayer separated from said first magnetic fixed sublayer by a first perpendicular enhancement layer, said first and second magnetic fixed sublayers having a first fixed magnetization direction substantially perpendicular to layer planes thereof,wherein said second magnetic fixed sublayer has a multilayer structure formed by interleaving layers of a first type material with layers of a second type material, at least one of said first and second type materials being magnetic.

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