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Two-terminal reversibly switchable memory device

  • US 9,831,425 B2
  • Filed: 09/03/2015
  • Issued: 11/28/2017
  • Est. Priority Date: 02/06/2004
  • Status: Active Grant
First Claim
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1. An apparatus, comprising:

  • a first electrode;

    a second electrode; and

    a memory element (ME) comprising tantalum, the memory element positioned between the first and second electrodes, the ME electrically coupled in series with the first and second electrodes, the ME comprising;

    a first ion reservoir comprising mobile oxygen ions, the first ion reservoir in contact with the first electrode;

    a tunnel barrier in contact with the first ion reservoir, the tunnel barrier made from a material that is an electrolyte to the mobile oxygen ions and is permeable by the mobile oxygen ions responsive to a first voltage applied across the first and second electrodes, and wherein the tunnel barrier is coupled in series with the first ion reservoir; and

    a second reservoir in contact with the tunnel barrier and positioned between the second electrode and the tunnel barrier, the second reservoir operative as a repository for the mobile oxygen ions.

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