Power splitter with programmable output phase shift

• US 9,831,857 B2
• Filed: 03/11/2015
• Issued: 11/28/2017
• Est. Priority Date: 03/11/2015
• Status: Active Grant

• Current Assignee: pSemi Corporation (Murata Manufacturing Co Limited)
• Original Assignee: Peregrine Semiconductor Corporation (Murata Manufacturing Co Limited)
• Inventors: Facchini, Marc, Bacon, Peter
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): GLENN, KIMBERLY E
• Application Number:
  US14/645,217
• Publication Number:
  US 20160269008A1
• Time in Patent Office: 993 Days
• Field of Search: 333100
• CPC Class Codes: H03F 1/0288 using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
• CPC Class Codes: H03F 1/565 using inductive elements
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 3/193 with field-effect devices H03F3/195 takes precedence
• CPC Class Codes: H03F 3/601 using FET's, e.g. GaAs FET's H03F3/607, H03F3/608 take precedence
• CPC Class Codes: H03K 2005/00286 Phase shifter, i.e. the delay between the output and input pulse is dependent on the frequency, and such that a phase difference is obtained independent of the frequency
• CPC Class Codes: H03K 5/13 Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals

Abstract

Devices and methods for implementing an RF integrated circuit device operatively configured to provide the function of RF power splitter with programmable output phase shift are described. Configurable and adjustable phase shift units for use in such IC device are also described.

Claims

1. An integrated circuit (IC) device configured for operation within a desired operating frequency range, the IC device comprising:

an input port configured to receive an input radio frequency (RF) signal;

a first output port configured to output a first output RF signal based on the input RF signal; and

a second output port configured to output a second output RF signal based on the input RF signal,

wherein during operation within the desired operating frequency range and with respect to an input power level of the input power signal;

the IC device is configured to operate in one of two modes of operation;

a first mode of operation and a second mode of operation,

a power of the first output RF signal in the first mode of operation is equal to a power of the first output RF signal in the second mode of operation,

a power of the second output RF signal in the first mode of operation is equal to a power of the second output RF signal in the second mode of operation,

a sum of the power of the first output RF signal and the power of the second output RF signal is constant, and

a relative phase of the first output RF signal to the second output RF signal in the first mode of operation, Δ

Phase_m1, is opposite of a relative phase of the first output RF signal to the second output RF signal in the second mode of operation, Δ

Phase_m2, such that Δ

Phase_m1=−

Δ

Phase_m2.

2. The IC device of claim 1, wherein the sum of the power of the first output RF signal and the power of the second output RF signal is equal within −

2 dB to the input power level of the input RF signal.

3. The IC device of claim 2, wherein the power of the first output RF signal is equal within 1 dB to the power of the second output RF signal.

4. The IC device of claim 2, further comprising a power divider module configured, during operation of the IC device within the desired operating frequency range, to split the input RF signal into a first split RF signal and a second split RF signal, wherein a phase difference between the input RF signal and the first split RF signal is equal to a phase difference between the input RF signal and the second split RF signal.

5. The IC device of claim 4, further comprising a first phase shift module and a second phase shift module, wherein the first phase shift module and the second phase shift module are configured, during operation of the IC device within the desired operating frequency range, to respectively generate the first output RF signal from the first split RF signal and the second output RF signal from the second split RF signal.

6. The IC device of claim 5, wherein:

an absolute value of a relative phase shift between the first output RF signal and the first split RF signal in the first mode of operation, |Φ

_1A|, is different from an absolute value of a relative phase shift between the first output RF signal and the first split RF signal in the second mode of operation, |Φ

_1B|, such that |Φ

_1A|≠

|Φ

_1B|, and

an absolute value of a relative phase shift between the second output RF signal and the second split RF signal in the first mode of operation, |Φ

_2B|, is different from an absolute value of a relative phase shift between the second output RF signal and the second split RF signal in the second mode of operation, |Φ

_2A|, such that |Φ

_2A|≠

|Φ

_2B|.

7. The IC device of claim 5, wherein:

a relative phase shift between the first output RF signal and the first split RF signal in the first mode of operation, Φ

_1A, and a relative phase shift between the first output RF signal and the first split RF signal in the second mode of operation, Φ

_1B, are of opposite signs, such that Φ

_1A=−

Φ

_1B, and

a relative phase shift between the second output RF signal and the second split RF signal in the first mode of operation, Φ

_2B, and a relative phase shift between the second output RF signal and the second split RF signal in the second mode of operation, Φ

_2A, are of opposite signs, such that Φ

_2A=−

Φ

_2B.

8. The IC device of claim 5, wherein:

a relative phase shift between the first output RF signal and the first split RF signal in the first mode of operation, Φ

_1A, and a relative phase shift between the second output RF signal and the second split RF signal in the second mode of operation, Φ

_2A, are equal, such that Φ

_1A=Φ

_2A, and

a relative phase shift between the first output RF signal and the first split RF signal in the second mode of operation, Φ

_1B, and a relative phase shift between the second output RF signal and the second split RF signal in the first mode of operation, Φ

_2B, are equal, such that Φ

_1B=Φ

_2B.

9. The IC device of claim 5, wherein:

absolute values of relative phase shifts between the first and the second output RF signals and corresponding first and second split RF signals in the first and second modes of operation, |Φ

_1A|, |Φ

_1B|, |Φ

_2A|, |Φ

_2B|, are different, such that |Φ

_1A|≠

|Φ

_2A|≠

|Φ

_1B|≠

|Φ

_2B|.

10. The IC device of any one of claim 6, 8 or 9, wherein:

an absolute value of a difference between the absolute value of the relative phase shift between the first output RF signal and the first split RF signal in the first mode of operation, |Φ

_1A|, and the absolute value of the relative phase shift between the first output RF signal and the first split RF signal in the second mode of operation, |Φ

_1B|, is equal to or larger than 2°

, such that ∥

Φ

_1A|−

|Φ

_1B∥

≧

2°

, and

an absolute value of a difference between the absolute value of the relative phase shift between the second output RF signal and the second split RF signal in the first mode of operation, |Φ

_2B|, and the absolute value of the relative phase shift between the second output RF signal and the second split RF signal in the second mode of operation, |Φ

_2A|, is equal to or larger than 2°

, such that ∥

Φ

_2A|−

|Φ

_2B∥

≧

2°

.

11. The IC device of claim 5,

wherein during the first mode of operation:

the first phase shift module provides a first conduction path between the first split RF signal and the first output RF signal, and

the second phase shift module provides a second conduction path between the second split RF signal and the second output RF signal,

and

wherein during the second mode of operation;

the first phase shift module provides a third conduction path between the first split RF signal and the first output RF signal, and

the second phase shift module provides a fourth conduction path between the second split RF signal and the second output RF signal.

12. The IC device of claim 11, wherein the first phase shift module and the second phase shift module each comprise one or more switches configured to select a conduction path between the first/second split RF signals and the first/second output RF signals in correspondence of the first and the second modes of operation.

13. The IC device of claim 11, wherein the each of the first, the second, the third and the fourth conduction path comprises a circuit network configured to provide a phase shift and a signal attenuation of equal to or less than 0.3 dB within the desired operating frequency range.

14. The IC device of claim 13, wherein the phase shift of the circuit network is selected such as to provide one or more of:

a) a desired insertion loss, b) a desired return loss, and c) a desired physical size of the circuit network.

15. The IC device of claim 13, wherein the circuit network is a filter network comprising a capacitive element and an inductive element.

16. The IC device of claim 14, wherein the filter network is one of:

a) a low pass filter, b) a high pass filter, c) a band pass filter, d) a band reject filter, and e) an all pass filter.

17. The IC device of claim 14, wherein the filter network in the first and fourth conduction paths is a low pass filter, and the filter network in the second and the third conduction paths is a high pass filter.

18. The IC device of claim 13, wherein the circuit network is a time delay circuit.

19. The IC device of claim 18, wherein the time delay circuit comprises a constant-R network.

20. The IC device of claim 13, wherein:

the circuit network in the first and the second conduction paths are configured to provide the relative phase of the first output RF signal to the second output RF signal in the first mode of operation, and

the circuit network in the third and the fourth conduction paths are configured to provide the relative phase of the first output RF signal to the second output RF signal in the second mode of operation.

21. The IC device of claim 11, wherein the first phase shift module is a first configurable low pass/high pass filter network comprising reactive components, and the second phase shift module is a second configurable low pass/high pass filter network comprising reactive components.

22. The IC device of claim 21, wherein at least one reactive component of the first/second configurable low pass/high pass filter networks includes series reactive components with parallel coupled switches, and shunted reactive components with series coupled switches.

23. The IC device of claim 21, wherein a at least one reactive component of the first or second configurable low pass/high pass filter networks is a tunable reactive component.

24. The IC device of claim 23, wherein the tunable reactive component is one of:

a) a digitally tunable capacitor, and b) a digitally tunable inductor.

25. The IC device of claim 23, wherein the first/second configurable low pass/high pass filter network is configured, during operation within the desired operating frequency range, to adjust in discrete phase steps the relative phase of the first output RF signal to the second output RF signal in first and the second modes of operation.

26. The IC device of claim 25, wherein a step of the discrete phase steps is in a range between 1.4°

and 5.6°

.

27. The IC device of claim 25, wherein the first/second configurable low pass/high pass filter network is further configured, during operation within the desired operating frequency range, to adjust the power of the first and the second output RF signals in the first and the second modes of operation.

28. The IC device of claim 27, wherein the power is adjusted in discrete attenuation steps with a step resolution in a range between 0.05 dB and 0.50 dB.

29. The IC device of claim 25, further comprising an adjustable attenuation module coupled between the power divider module and one or both of the first and second output ports, wherein the adjustable attenuation module is configured, during operation within the desired operating frequency, to attenuate an RF power of a signal at the one or both of the first and the second output ports.

30. The IC device of claim 29, wherein the adjustable attenuation module is adapted to attenuate the RF power in discrete attenuation steps with a step resolution in a range between 0.05 dB and 0.50 dB.

31. The IC device of claim 1, wherein the desired operating frequency range comprises a range between 100 MHz and 100 GHz.

32. The IC device of claim 1, wherein the desired operating frequency range is F_R, wherein F_R is one of:

a) 1.8 GHz≦

F_R≦

2.0 GHz, b) 3.6 GHz≦

F_R≦

4.0 GHz, c) 1.8 GHz≦

F_R≦

2.2 GHz, d) 2.3 GHz≦

F_R≦

2.7 GHz, e) 3.4 GHz≦

F_R≦

3.8 GHz, and f) 5.0 GHz≦

F_R≦

12.0 GHz.

33. The IC device of claim 31, wherein an absolute value of the relative phase of the first output RF signal to the second output RF signal in the first mode of operation is in a range Φ

_R, wherein 0°

≦

Φ

_R≦

90°

.

34. The IC device of claim 31, wherein an absolute value of the relative phase of the first output RF signal to the second output RF signal in the first mode of operation is one of:

a) 45°

, b) 90°

, and c) 180°

.

35. A radio frequency (RF) circuital arrangement comprising a first Doherty amplifier coupled to the IC device of claim 1, the first Doherty amplifier comprising a first peaking amplifier and a first carrier amplifier.

36. The RF circuital arrangement of claim 35, comprising a second Doherty amplifier coupled to the IC device, the second Doherty amplifier comprising a second peaking amplifier and a second carrier amplifier, wherein a coupling of the first peaking amplifier and the first carrier amplifier of the first Doherty amplifier to the first and the second output ports of the IC device is opposite from a coupling of the second peaking amplifier and the second carrier amplifier of the second Doherty amplifier to the first and the second output ports of the IC device.

37. The IC device of claim 1, further comprising a plurality of transmission lines configured during operation of the arrangement to provide Δ

Phase_m1 and Δ

Phase_m2.

38. The IC device of claim 37, further comprising an input switch configured to provide a first conduction path for the input RF signal between the input port and the first output port, and a second conduction path for the input RF signal between the input port and the second output port.

39. The IC device of claim 38, wherein the first conduction path between the input port and the first output port and the second conduction path between the input port and the second output port comprise one or more common transmission lines of the plurality of transmission lines.

40. The IC device of claim 39, further comprising a first termination switch and a second termination switch, each configured to terminate the input RF signal at the input port in the first and the second mode of operation respectively.

41. The IC device of claim 40, wherein the first and the second termination switches are respectively connected to a first end and a second end of an input transmission line of the plurality of transmission lines.

42. The IC device of claim 41, wherein the input switch connects the input port to the first end and the second end of the input transmission line in the second and the first mode of operation respectively.

43. The IC device of claim 42, wherein a transmission line of the plurality of transmission lines is a quarter-wave transmission line.

44. The IC device of claim 39, wherein a difference in the first conduction path between the input port and the first output port and the second conduction path between the input port and the second output port is one transmission line of the plurality of transmission lines.

45. The IC device of claim 37, wherein the desired operating frequency range comprises a range between 100 MHz and 100 GHz.

46. The IC device of claim 37, wherein the desired operating frequency range is F_R, wherein F_R is one of:

a) 1.8 GHz≦

F_R≦

2.0 GHz, b) 3.6 GHz≦

F_R≦

4.0 GHz, c) 1.8 GHz≦

F_R≦

2.2 GHz, d) 2.3 GHz≦

F_R≦

2.7 GHz, e) 3.4 GHz≦

F_R≦

3.8 GHz, and f) 5.0 GHz≦

F_R≦

12.0 GHz.

47. An integrated circuit (IC) device configured for operation within a desired operating frequency range, the IC device comprising:

an input port configured to receive an input radio frequency (RF) signal;

a first output port configured to output a first output RF signal based on the input RF signal; and

a second output port configured to output a second output RF signal based on the input RF signal,

wherein during operation within the desired operating frequency range and with respect to an input power level of the input RF signal;

the IC device is configured to operate in one of two modes of operation;

a first mode of operation and a second mode of operation,

a power of the first output RF signal in the first mode of operation is equal to a power of the first output RF signal in the second mode of operation,

a power of the second output RF signal in the first mode of operation is equal to a power of the second output RF signal in the second mode of operation,

a sum of the power of the first output RF signal and the power of the second output RF signal is constant, and

an absolute value of a difference between a relative phase of the first output RF signal to the second output RF signal in the first mode of operation, Δ

Phase_m1, and a relative phase of the first output RF signal to the second output RF signal in the second mode of operation, Δ

Phase_m2, is a desired phase offset, K, such that |Δ

Phase_m1|−

|Δ

Phase_m2|=K.

48. The IC device of claim 47, further comprising a first phase shift module and a second phase shift module, wherein the first phase shift module and the second phase shift module are configured, during operation of the IC device within the desired operating frequency range, to generate Δ

Phase_m1 and Δ

Phase_m2.

49. The IC device of claim 48, wherein the first phase shift module and the second phase shift module comprise one or more filter networks.

50. The IC device of claim 49, wherein a filter network of the one or more filter networks is a configurable filter.

51. The IC device of claim 47, wherein the sum of the power of the first output RF signal and the power of the second output RF signal is equal within −

2 dB to the input power level of the input RF signal.