Embedded metallic structures in glass

• US 9,832,867 B2
• Filed: 11/23/2015
• Issued: 11/28/2017
• Est. Priority Date: 11/23/2015
• Status: Active Grant

• Current Assignee: Medtronic Incorporated (Medtronic Plc)
• Original Assignee: Medtronic Incorporated (Medtronic Plc)
• Inventors: Day, John K., Ruben, David A., Sandlin, Michael S.
• Primary Examiner(s): Sawyer, Steven T
• Application Number:
  US14/949,277
• Publication Number:
  US 20170150600A1
• Time in Patent Office: 736 Days
• Field of Search: 438455, 438456
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68345 used as a support during the manufacture of self supporting substrates
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H05K 1/0306 Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/09 Use of materials for the conductive, e.g. metallic pattern
• CPC Class Codes: H05K 1/115 Via connections; Lands around holes or via connections H05K1/112 takes precedence
• CPC Class Codes: H05K 1/144 Stacked arrangements of planar printed circuit boards
• CPC Class Codes: H05K 2201/09036 Recesses or grooves in insulating substrate recess in metallic substrate H05K2201/09745
• CPC Class Codes: H05K 3/10 in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
• CPC Class Codes: H05K 3/4007 Surface contacts, e.g. bumps H05K3/4092 takes precedence; deposition of finish layers on pads H05K3/24; forming solder bumps H05K3/3457
• CPC Class Codes: H05K 3/4038 Through-connections; Vertical interconnect access [VIA] connections H05K3/403, H05K3/42 take precedence
• CPC Class Codes: H05K 3/4611 by laminating two or more circuit boards H05K3/4652 takes precedence
• CPC Class Codes: H05K 3/4644 by building the multilayer layer by layer, i.e. build-up multilayer circuits making via holes in the insulating layers H05K3/0011; special circuit boards as base or core whereon the multilayer is built H05K3/4602

Abstract

A device having embedded metallic structures in a glass is provided. The device includes a first wafer, at least one conductive trace, a planarized insulation layer and a second wafer. The first wafer has at least one first wafer via that is filled with conductive material. The at least one conductive trace is formed on the first wafer. The at least one conductive trace is in contact with the at least one first wafer via that is filled with the conductive material. The planarized insulation layer is formed over the first wafer and at least one conductive trace. The planarized insulation layer further has at least one insulation layer via that provides a path to a portion of the at least one conductive trace. The second wafer is bonded to the planarized insulation layer.

Claims

1. A device having embedded metallic structures in a glass comprising:

a first wafer having at least one first wafer via filled with conductive material;

at least one conductive trace formed on the first wafer, the at least one conductive trace being in contact with the at least one first wafer via filled with the conductive material;

a planarized insulation layer formed over the first wafer and at least one conductive trace, the planarized insulation layer further having at least one insulation layer via that provides a path to a portion of the at least one conductive trace, at least one conductive contact layer within at least a portion of the at least one insulation layer via, the at least one conductive contact layer being in contact with the at least one conductive trace; and

a second wafer fusion bonded to the planarized insulation layer, the second wafer having at least one non-filled via aligned with the at least one conductive contact layer, and at least one antennal structure in the first wafer, the antenna structure comprising a metal filled channel in the first wafer in contact with a second first wafer via filled with conductive material.

2. The device having embedded metallic structures in a glass of claim 1, wherein the first wafer and the second wafer are made of at least one from a group including silica, borosilicate glass, sapphire and quartz.

3. The device having embedded metallic structures in a glass of claim 1, wherein the conductive trace comprises at least one of titanium nitride, titanium, niobium, tantalum, platinum, platinum, iridium, titanium nitride alloy, titanium alloy, niobium alloy, tantalum alloy, platinum alloy, platinum alloy and iridium alloy and the conductive material that fills the first wafer via comprises at least one of copper, tungsten, copper glass composite, platinum glass composite, silver, silver filled epoxy and silver filled glass.

4. The device having embedded metallic structures in a glass of claim 1, wherein the planarized insulation layer is at least one layer of silicon dioxide.

5. The device having embedded metallic structures in a glass of claim 1, wherein the planarized insulation layer is made up of a plurality of sub-layers of silicon dioxide and silicon nitride.

6. The device having embedded metallic structures in a glass of claim 1, wherein the embedded metallic structure in glass is part of a package of an implantable medical device.

7. The device having embedded metallic structures in glass of claim 1, wherein the at least one conductive contact layer is a layer comprising titanium, titanium nitride, niobium or tantalum.

8. The device of claim 1, wherein the second wafer has a thickness that is greater than 25 μ

m.

9. The device having embedded metallic structures in glass of claim 1, wherein the at least one conductive trace is at least partially positioned within at least one trench in a surface of the first wafer.

10. A device having embedded metallic structures in a glass comprising:

a first wafer having at least one first wafer via filled with conductive material;

at least one conductive trace formed on the first wafer, the at least one conductive trace being in contact with the at least one first wafer via filled with the conductive material;

a planarized insulation layer formed over the first wafer and at least one conductive trace, the planarized insulation layer further having at least one insulation layer via that provides a path to a portion of the at least one conductive trace, at least one conductive contact layer within at least a portion of the at least one insulation layer via, the at least one conductive contact layer being in contact with the at least one conductive trace; and

a second wafer laser bonded to the planarized insulation layer, the second wafer having at least one non-filled via aligned with the at least one conductive contact layer, and at least one antennal structure in the first wafer, the antenna structure comprising a metal filled channel in the first wafer in contact with a second first wafer via filled with conductive material.