Periodic patterns and technique to control misalignment between two layers

• US 9,835,447 B2
• Filed: 10/24/2016
• Issued: 12/05/2017
• Est. Priority Date: 04/10/2001
• Status: Expired due to Term

• Current Assignee: KLA-Tencor Corporation (KLA Corporation)
• Original Assignee: KLA-Tencor Corporation (KLA Corporation)
• Inventors: Abdulhalim, Ibrahim, Adel, Mike, Friedmann, Michael, Faeyrman, Michael
• Primary Examiner(s): Chowdhury, Tarifur
• Assistant Examiner(s): Rahman, Md M
• Application Number:
  US15/332,155
• Publication Number:
  US 20170038198A1
• Time in Patent Office: 407 Days
• Field of Search: 356399
• CPC Class Codes: G01B 11/14 for measuring distance or clearance between spaced objects or spaced apertures G01B11/26 takes precedence; rangefinders G01C3/00
• CPC Class Codes: G01B 11/26 for measuring angles or tapers; for testing the alignment of axes
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2223/54426 for alignment
• CPC Class Codes: H01L 2223/54453 for use prior to dicing
• CPC Class Codes: H01L 2223/5446 Located in scribe lines
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.

Claims

1. An apparatus for determining the relative positions between two layers of a device and at least one of the layers of such device, the two layers comprising:

a first periodic structure in a first layer of the device; and

a second periodic structure having a first and second portion in a second layer of the device,

wherein the first portion of the second periodic structure is overlying or interlacing with the first periodic structure and together are arranged for measuring the relative positions between the first and second layers of the device,

wherein the second portion of the second periodic structure is in a region for measuring the second portion, and the first periodic structure does not extend into such region,

the apparatus comprising;

a source for illuminating the first periodic structure and the first portion of the second periodic structure that are overlying or interlacing with incident radiation and illuminating the second portion of the second periodic structure with incident radiation;

at least one detector for detecting diffracted radiation from the illuminated first periodic structure and the first portion of the second periodic structure along two different detection paths to provide at least one first output signal, wherein positive first-order diffraction is directed along one of the two paths and negative first-order diffraction is directed along the other one of the two different detector paths, wherein the at least one detector is also configured to detect radiation from the illuminated second portion of the second periodic structure to provide a second output signal; and

a processor for determining misalignment between the first and second periodic structures from the at least one first output signal and measuring the second portion of the second periodic structure based on the second output signal.

2. The apparatus of claim 1, wherein the first and second periodic structure are periodic in a first direction, and the second periodic structure extends in a direction that is different from the first direction into the region where the two structures do not overlap and where the first periodic structure does not extend.

3. The apparatus of claim 1, wherein the first periodic structure and the first portion of the second periodic structure overlay each other.

4. The apparatus of claim 1, wherein the first periodic structure and the first portion of the second periodic structure are interlaced with each other.

5. An apparatus for determining the relative positions between two layers of a device and at least one of the layers of such device, the two layers comprising:

a first periodic structure in a first layer of the device; and

a second periodic structure in a second layer overlying or interlacing with the first periodic structure,

wherein the first or second periodic structure has at least two periodic gratings that are interlaced and have different critical dimensions.

the apparatus comprising;

a source for illuminating the first and second periodic structures that are overlying or interlacing with incident radiation;

at least one detector for detecting diffracted radiation from the illuminated first and second periodic structures along two different detection paths to provide at least one first output signal, wherein positive first-order diffraction is directed along one of the two paths and negative first-order diffraction is directed along the other one of the two different detector paths; and

a processor for determining misalignment between the first and second periodic structures from the at least one first output signal and measuring the second portion of the second periodic structure based on the second output signal.

6. The apparatus of claim 5, wherein the at least two periodic gratings having different duty cycles.

7. The apparatus of claim 5, wherein the at least two periodic gratings having different line widths.

8. The apparatus of claim 5, wherein the first periodic structure and the second periodic structure overlay each other.

9. The apparatus of claim 5, wherein the first periodic structure and the second periodic structure are interlaced with each other.

10. The apparatus of claim 5, wherein the at least one detector is configured for detecting intensities of the positive first-order diffraction and negative first-order diffraction from the illuminated first and second periodic structures at a plurality of different incident polarization angles, and the processor is configured to subtract the intensities of the positive first-order diffraction and negative first-order diffraction detected at each of the different incident polarization angles to obtain a corresponding differential intensity value that is used to determine the relative positions.