Atomic layer deposition of silicon carbon nitride based materials
First Claim
1. A method of treating a silicon carbon nitride film on a three-dimensional structure having a sidewall region and a top region, the method comprising:
- exposing the silicon carbon nitride film on the substrate to a hydrogen-containing plasma generated from a reactant gas that comprises hydrogen gas (H2),wherein a ratio of a wet etch rate of the sidewall region to a wet etch rate of the top region of the treated silicon carbon nitride film on the three-dimensional structure is less than 3 as measured in a dilute aqueous solution of hydrofluoric acid having a concentration of 0.5 weight %, andwherein the treated silicon carbon nitride film has a wet etch rate that is less than about 50% of the wet etch rate of thermal silicon oxide, as measured in dilute hydrofluoric acid having a concentration of 0.5 weight %, or has a wet etch rate of less than about 1 nm/min in a dilute aqueous solution of hydrofluoric acid having a concentration of 0.5 weight %.
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Abstract
A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.
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Citations
18 Claims
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1. A method of treating a silicon carbon nitride film on a three-dimensional structure having a sidewall region and a top region, the method comprising:
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exposing the silicon carbon nitride film on the substrate to a hydrogen-containing plasma generated from a reactant gas that comprises hydrogen gas (H2), wherein a ratio of a wet etch rate of the sidewall region to a wet etch rate of the top region of the treated silicon carbon nitride film on the three-dimensional structure is less than 3 as measured in a dilute aqueous solution of hydrofluoric acid having a concentration of 0.5 weight %, and wherein the treated silicon carbon nitride film has a wet etch rate that is less than about 50% of the wet etch rate of thermal silicon oxide, as measured in dilute hydrofluoric acid having a concentration of 0.5 weight %, or has a wet etch rate of less than about 1 nm/min in a dilute aqueous solution of hydrofluoric acid having a concentration of 0.5 weight %. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification