Oxide etch selectivity enhancement

• US 9,837,284 B2
• Filed: 03/08/2017
• Issued: 12/05/2017
• Est. Priority Date: 09/25/2014
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chen, Zhijun, Wang, Anchuan, Ingle, Nitin K.
• Primary Examiner(s): Kebede, Brook
• Application Number:
  US15/453,786
• Publication Number:
  US 20170178924A1
• Time in Patent Office: 272 Days
• Field of Search: 438689, 438704, 438709, 438711, 438714
• CPC Class Codes: H01J 2237/3341 Reactive etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous structures to remove an exposed silicon oxide portion faster than an exposed silicon nitride portion. The inclusion of the oxygen-containing precursor may suppress the silicon nitride etch rate and result in unprecedented silicon oxide etch selectivity.

Claims

1. A method of etching a patterned substrate, the method comprising:

placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed silicon oxide portion and an exposed silicon nitride portion;

flowing a radical-fluorine precursor into the substrate processing region;

flowing a radical-oxygen precursor into the substrate processing region;

flowing a hydrogen-and-oxygen-containing precursor into the substrate processing region without first passing the hydrogen-and-oxygen-containing precursor through any plasma, wherein the hydrogen-and-oxygen-containing precursor comprises an OH group;

etching the exposed silicon oxide portion, wherein the exposed silicon oxide portion etches at a first etch rate and the exposed silicon nitride portion etches at a second etch rate which is lower than the first etch rate.

2. The method of claim 1 wherein an electron temperature within the substrate processing region is below 0.5 eV during the operation of etching the exposed silicon oxide portion.

3. The method of claim 1 wherein the hydrogen-and-oxygen-containing precursor is excited predominantly by the radical-fluorine precursor and the radical-oxygen precursor.

4. The method of claim 1 wherein the substrate processing region is plasma-free during the operation of etching the exposed silicon oxide portion.

5. The method of claim 1 wherein the hydrogen-and-oxygen-containing precursor is not excited by any plasma outside the substrate processing region prior to entering the substrate processing region.

6. The method of claim 1 wherein the radical-fluorine precursor is formed in a first remote plasma from a fluorine-containing precursor.

7. The method of claim 6 wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride, hydrogen fluoride and xenon difluoride.

8. The method of claim 1 wherein the radical-fluorine precursor and the radical-oxygen precursor flow through through-holes in a dual-zone showerhead and the hydrogen-and-oxygen-containing precursor passes through separate zones in the dual-zone showerhead such that the hydrogen-and-oxygen-containing precursor first encounters the radical-fluorine precursor and the radical-oxygen precursor inside the substrate processing region.

9. The method of claim 1 wherein the hydrogen-and-oxygen-containing precursor comprises one of water vapor or an alcohol.

10. The method of claim 1 wherein the radical-oxygen precursor is formed in a second remote plasma from an oxygen-containing precursor.

11. The method of claim 10 wherein the oxygen-containing precursor comprises one or more of O₂, O₃, N₂O, NO₂ and N₂O₂.

12. The method of claim 1 wherein the first etch rate exceeds the second etch rate by a factor of about 80 or more.