Methods of forming 3-D circuits with integrated passive devices
First Claim
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1. A structure comprising circuitry for operation at one or more frequencies at least as high as a radio frequency, the circuitry comprising:
- one or more active devices;
one or more passive devices electrically coupled to the one or more active devices; and
a ground plane separating the one or more active from the one or more passive devices;
wherein the structure comprises;
a first semiconductor substrate comprising at least part of the one or more active devices; and
a second semiconductor substrate overlying the first semiconductor substrate and supporting at least part of the one or more passive devices located over the second semiconductor substrate;
wherein the ground plane overlies the first semiconductor substrate and underlies at least part of the second semiconductor substrate;
wherein the circuitry further comprises one or more conductive paths passing through the second semiconductor substrate and electrically coupling the one or more passive devices to the one or more active devices.
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Abstract
Methods of forming 3-D ICs with integrated passive devices (IPDs) include stacking separately prefabricated substrates. An active device (AD) substrate has contacts on its upper portion. A ground plane is located between the AD substrate and an IPD substrate. The ground plane provides superior IPD to AD cross-talk attenuation.
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Citations
21 Claims
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1. A structure comprising circuitry for operation at one or more frequencies at least as high as a radio frequency, the circuitry comprising:
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one or more active devices; one or more passive devices electrically coupled to the one or more active devices; and a ground plane separating the one or more active from the one or more passive devices; wherein the structure comprises; a first semiconductor substrate comprising at least part of the one or more active devices; and a second semiconductor substrate overlying the first semiconductor substrate and supporting at least part of the one or more passive devices located over the second semiconductor substrate; wherein the ground plane overlies the first semiconductor substrate and underlies at least part of the second semiconductor substrate; wherein the circuitry further comprises one or more conductive paths passing through the second semiconductor substrate and electrically coupling the one or more passive devices to the one or more active devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method comprising forming a structure comprising circuitry for operation at one or more frequencies at least as high as a radio frequency, the circuitry comprising:
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one or more active devices; one or more passive devices electrically coupled to the one or more active devices; a ground plane separating the one or more active devices from the one or more passive devices; and one or more conductive paths electrically coupling the one or more passive devices to the one or more active devices; wherein forming the structure comprises; providing a first semiconductor substrate comprising at least part of the one or more active devices; providing a second semiconductor substrate supporting at least part of the one or more passive devices located over the second semiconductor substrate; attaching together a plurality of components including the first and second semiconductor substrates, to form said structure, such that the ground plane overlies the first semiconductor substrate and underlies at least part of the second semiconductor substrate; wherein the one or more conductive paths pass through the second semiconductor substrate to electrically couple the one or more passive devices to the one or more active devices. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification