Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor
First Claim
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1. A method of forming a tier of an array of memory cells within an array area, the memory cells individually comprising a capacitor and an elevationally-extending transistor, the method comprising using two, and only two, sacrificial masking steps within the array area of the tier in forming the memory cells.
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Abstract
A method of forming a tier of an array of memory cells within an array area, the memory cells individually comprising a capacitor and an elevationally-extending transistor, the method comprising using two, and only two, sacrificial masking steps within the array area of the tier in forming the memory cells. Other methods are disclosed, as are structures independent of method of fabrication.
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Citations
75 Claims
- 1. A method of forming a tier of an array of memory cells within an array area, the memory cells individually comprising a capacitor and an elevationally-extending transistor, the method comprising using two, and only two, sacrificial masking steps within the array area of the tier in forming the memory cells.
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8. A method of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor, the method sequentially comprising:
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using a first sacrificial mask to pattern digit line material and channel-comprising material there-above in a first direction to form digit lines within the array having lines of the channel-comprising material there-above; using a second sacrificial mask to pattern the channel-comprising material in a second direction that is different from the first direction to cut the lines of channel-comprising material above the digit lines into spaced individual channels of individual transistors of individual memory cells within the array; forming gate insulator and an access line laterally across and operatively laterally adjacent a lateral side of the individual transistor channels; and forming capacitors that individually have one of their capacitor electrodes directly against a lateral side of an upper source/drain region of one of the individual transistors of the individual memory cells within the array. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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9. A method of forming a tier of an array of memory cells individually comprising a capacitor and an elevationally-extending transistor, comprising:
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forming digit line material over a substrate, channel-comprising material above the digit line material, and source/drain-comprising material above the channel-comprising material; patterning the digit line material, the channel-comprising material, and the source/drain-comprising material to form digit lines within the array and to form elevationally-extending pillars comprising individual channels and individual upper source/drain regions of individual transistors of individual memory cells within the array; forming gate insulator and an access line laterally across and operatively laterally adjacent a lateral side of the individual transistor channels; forming a first capacitor electrode over first laterally-opposing sides of the pillars directly against a pair of first laterally-opposing sides of the individual upper source/drain regions within the array; and forming a capacitor insulator over the first capacitor electrode and forming a second capacitor electrode over the capacitor insulator within the array. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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10. A method of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor, comprising:
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forming pillars extending elevationally upward from digit lines, the pillars individually comprising an individual channel and an individual upper source/drain region of individual transistors of individual memory cells within the array; forming gate insulator and an access line laterally across and operatively laterally adjacent a lateral side of the individual transistor channels; forming a first capacitor electrode completely encircling and directly against all peripheral lateral sides of the individual upper source/drain regions within the array; and forming a capacitor insulator over and completely encircling individual of the first capacitor electrodes and forming a second capacitor electrode over and completely encircling the encircling capacitor insulator within the array. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42)
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11. A method of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor, comprising:
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forming digit line material over a substrate, channel-comprising material above the digit line material, and source/drain-comprising material above the channel-comprising material; patterning the digit line material, the channel-comprising material, and the source/drain-comprising material in a first direction to form digit lines within the array having lines of the channel-comprising material and lines of the source/drain-comprising material there-above; forming first material in trenches that are laterally between the digit lines and the lines there-above within the array; patterning the channel-comprising material, the source/drain-comprising material, and the first material in a second direction that is different from the first direction to form elevationally-extending pillars comprising individual channels and individual upper source/drain regions of individual transistors of individual memory cells within the array and having the first material laterally between the pillars; forming gate insulator and access line pairs laterally across a pair of first laterally-opposing sides of the pillars operatively laterally adjacent a pair of first laterally-opposing sides of the individual channels within the array; forming second material in trenches that are laterally between the pillars and the first material within the array; removing the first and second materials sufficiently to expose encircling peripheral lateral sides of the individual upper source/drain regions; forming a first capacitor electrode completely encircling and directly against all of the encircling peripheral lateral sides of the individual upper source/drain regions within the array; and forming a capacitor insulator over and completely encircling individual of the first capacitor electrodes and forming a second capacitor electrode over and completely encircling the encircling capacitor insulator within the array. - View Dependent Claims (43, 44, 45)
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12. A method of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor, comprising:
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forming alternating first and second elevationally-extending pillars, the first pillars extending elevationally upward from digit lines and individually comprising an individual channel and an individual upper source/drain region of individual transistors of individual memory cells within the array; forming gate insulator and an access line laterally across and operatively laterally adjacent a lateral side of the individual transistor channels; forming first capacitor electrode line pairs laterally across the first and second pillars, the first capacitor electrode line pairs being directly against a pair of first laterally-opposing sides of the individual upper source/drain regions of the individual first pillars within the array; removing material of the second pillars from lateral sides of the first capacitor electrode line pairs and then cutting laterally through the lateral sides of the first capacitor electrode line pairs to form first capacitor electrodes that individually are directly against the first laterally-opposing sides of the individual upper source/drain regions within the array; and providing a capacitor insulator over the first capacitor electrodes and a second capacitor electrode over the capacitor insulator within the array. - View Dependent Claims (46, 47, 48, 49)
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13. An array of memory cells individually comprising a capacitor and an elevationally-extending transistor, the array comprising rows of access lines and columns of digit lines, comprising:
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individual of the columns comprising a digit line under channels of elevationally-extending transistors of individual memory cells within the array and interconnecting the transistors in that column; individual of the rows comprising an access line above the digit lines, the access line extending laterally across and operatively laterally adjacent a lateral side of the transistor channels and interconnecting the transistors in that row; and capacitors of the individual memory cells within the array individually comprising; a first capacitor electrode directly against a lateral side of an upper source/drain region of individual of the transistors within the array; a capacitor insulator over the first capacitor electrode; and a second capacitor electrode over the capacitor insulator. - View Dependent Claims (50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
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14. An array of memory cells individually comprising a capacitor and an elevationally-extending transistor, the array comprising rows of access lines and columns of digit lines, comprising:
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individual of the columns comprising a digit line under channels of elevationally-extending transistors of individual memory cells within the array and interconnecting the transistors in that column; individual of the rows comprising an access line above the digit lines, the access line extending laterally across and operatively laterally adjacent a lateral side of the transistor channels and interconnecting the transistors in that row; and capacitors of the individual memory cells within the array individually comprising; a first capacitor electrode directly against a pair of first laterally-opposing sides of an upper source/drain region of individual of the transistors within the array; a capacitor insulator over the first capacitor electrode; and a second capacitor electrode over the capacitor insulator. - View Dependent Claims (60, 61)
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15. An array of memory cells individually comprising a capacitor and an elevationally-extending transistor, the array comprising rows of access lines and columns of digit lines, comprising:
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individual of the columns comprising a digit line under channels of elevationally-extending transistors of individual memory cells within the array and interconnecting the transistors in that column; individual of the rows comprising an access line above the digit lines, the access line extending laterally across and operatively laterally adjacent a lateral side of the transistor channels and interconnecting the transistors in that row; and the individual memory cells comprising a pillar extending elevationally above the digit lines, the pillar comprising one of the transistor channels and an upper source/drain region of individual of the transistors, the pillar having an elevational thickness that is at least three times that of the one transistor channel; and capacitors of the individual memory cells within the array individually comprising; a first capacitor electrode directly against a pair of first laterally-opposing sides of the pillar and the upper source/drain region of the respective one individual transistor within the array; a capacitor insulator over the first capacitor electrode; and a second capacitor electrode over the capacitor insulator. - View Dependent Claims (62, 63, 64, 65, 66, 67, 68, 69, 70)
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16. An array of memory cells individually comprising a capacitor and an elevationally-extending transistor, the array comprising rows of access lines and columns of digit lines, comprising:
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individual of the columns comprising a digit line under channels of elevationally-extending transistors of individual memory cells within the array and interconnecting the transistors in that column; individual of the rows comprising an access line above the digit lines, the access line extending laterally across and operatively laterally adjacent a lateral side of the transistor channels and interconnecting the transistors in that row; and capacitors of the individual memory cells within the array individually comprising; an upwardly-open and downwardly-open first capacitor electrode cylinder completely encircling and directly against all peripheral lateral sides of an upper source/drain region of individual of the transistors within the array; a capacitor insulator over radially outer sides and radially inner sides of the first capacitor electrode cylinder; and a second capacitor electrode over the capacitor insulator and over the radially outer sides and the radially inner sides of the first capacitor electrode cylinder. - View Dependent Claims (71, 72, 73, 74, 75)
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Specification