×

Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor

  • US 9,837,420 B1
  • Filed: 01/10/2017
  • Issued: 12/05/2017
  • Est. Priority Date: 01/10/2017
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a tier of an array of memory cells within an array area, the memory cells individually comprising a capacitor and an elevationally-extending transistor, the method comprising using two, and only two, sacrificial masking steps within the array area of the tier in forming the memory cells.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×