Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state
First Claim
1. A semiconductor device comprising:
- a driver circuit portion comprising a shift register having a plurality of n-channel transistors; and
a pixel portion comprising a capacitor,wherein the plurality of n-channel transistors each comprise an oxide semiconductor layer containing indium, gallium, and zinc,wherein the oxide semiconductor layer is interposed between two gate electrodes, andwherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state.
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Abstract
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a driver circuit portion comprising a shift register having a plurality of n-channel transistors; and a pixel portion comprising a capacitor, wherein the plurality of n-channel transistors each comprise an oxide semiconductor layer containing indium, gallium, and zinc, wherein the oxide semiconductor layer is interposed between two gate electrodes, and wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a driver circuit portion comprising a shift register having a plurality of n-channel transistors; and a pixel portion comprising a capacitor, wherein the plurality of n-channel transistors each comprise an oxide semiconductor layer containing indium, tin, and zinc, wherein the oxide semiconductor layer is interposed between two gate electrodes, and wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification