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Electronic device and electronic apparatus

  • US 9,837,451 B2
  • Filed: 03/17/2016
  • Issued: 12/05/2017
  • Est. Priority Date: 04/27/1999
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a pixel comprising;

    a first transistor comprising a first region of a semiconductor layer, an insulating film, and a gate electrode;

    a second transistor electrically connected to the first transistor;

    a capacitor comprising a second region of the semiconductor layer and a conductive film; and

    an EL element electrically connected to one of a source and a drain of the second transistor;

    a first wiring electrically connected to one of a source and a drain of the first transistor,a second wiring electrically connected to the gate electrode of the first transistor,a third wiring electrically connected to the other of the source and the drain of the second transistor,wherein the insulating film is provided between the first region of the semiconductor layer and the gate electrode of the first transistor,wherein the conductive film overlaps with the second region of the semiconductor layer,wherein the conductive film is configured to serve as one terminal of the capacitor, andwherein the conductive film is in direct contact with the third wiring.

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