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Production method for group III nitride semiconductor and group III nitride semiconductor

  • US 9,837,494 B2
  • Filed: 03/18/2013
  • Issued: 12/05/2017
  • Est. Priority Date: 03/30/2012
  • Status: Active Grant
First Claim
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1. A method for producing a Group III nitride semiconductor comprising:

  • forming mesas and dents on a main surface of a substrate by processing the substrate, the mesas and dents being made of material of the substrate as one body; and

    growing Group III nitride semiconductor in a c-axis direction of the Group III nitride semiconductor on the top surfaces of the mesas and the bottom surfaces of the dents, whereinthe substrate consists of one member selected from a group consisting of sapphire, SiC, Si and ZnO, andside surfaces of the mesas and the dents are formed so as to satisfy the following conditions;

    a plane, which is most parallel to the side surfaces among low-index planes of the growing Group III nitride semiconductor, is a m-plane (1-100); and

    when a projected vector obtained by orthogonally projecting a normal vector of the side surface to the main surface is defined as a lateral vector, an angle formed by the lateral vector and a projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing Group III nitride semiconductor to the main surface is 0.5°

    or more and 6°

    or less.

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