×

Semiconductor device, manufacturing method thereof, and display device including the semiconductor device

  • US 9,837,512 B2
  • Filed: 11/01/2016
  • Issued: 12/05/2017
  • Est. Priority Date: 07/15/2014
  • Status: Active Grant
First Claim
Patent Images

1. A manufacturing method of a semiconductor device comprising a transistor, comprising:

  • forming a gate electrode over a substrate;

    forming a gate insulating film over the gate electrode;

    forming a first oxide semiconductor film over the gate insulating film;

    forming a second oxide semiconductor film over the first oxide semiconductor film;

    forming a source electrode and a drain electrode over the second oxide semiconductor film;

    forming an oxide insulating film over the second oxide semiconductor film;

    forming an oxide conductive film over the oxide insulating film;

    adding oxygen into the oxide insulating film through the oxide conductive film; and

    removing the oxide conductive film,wherein the step of forming the source electrode and the drain electrode is performed so that a region of the second oxide semiconductor film becomes thinner than the first oxide semiconductor film,wherein the step of forming the oxide insulating film is performed at a temperature higher than or equal to 180°

    C. and lower than or equal to 350°

    C. in a plasma enhanced chemical vapor deposition apparatus, andwherein the temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×