Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
First Claim
1. A manufacturing method of a semiconductor device comprising a transistor, comprising:
- forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a first oxide semiconductor film over the gate insulating film;
forming a second oxide semiconductor film over the first oxide semiconductor film;
forming a source electrode and a drain electrode over the second oxide semiconductor film;
forming an oxide insulating film over the second oxide semiconductor film;
forming an oxide conductive film over the oxide insulating film;
adding oxygen into the oxide insulating film through the oxide conductive film; and
removing the oxide conductive film,wherein the step of forming the source electrode and the drain electrode is performed so that a region of the second oxide semiconductor film becomes thinner than the first oxide semiconductor film,wherein the step of forming the oxide insulating film is performed at a temperature higher than or equal to 180°
C. and lower than or equal to 350°
C. in a plasma enhanced chemical vapor deposition apparatus, andwherein the temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor.
1 Assignment
0 Petitions
Accused Products
Abstract
The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.
-
Citations
12 Claims
-
1. A manufacturing method of a semiconductor device comprising a transistor, comprising:
-
forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first oxide semiconductor film over the gate insulating film; forming a second oxide semiconductor film over the first oxide semiconductor film; forming a source electrode and a drain electrode over the second oxide semiconductor film; forming an oxide insulating film over the second oxide semiconductor film; forming an oxide conductive film over the oxide insulating film; adding oxygen into the oxide insulating film through the oxide conductive film; and removing the oxide conductive film, wherein the step of forming the source electrode and the drain electrode is performed so that a region of the second oxide semiconductor film becomes thinner than the first oxide semiconductor film, wherein the step of forming the oxide insulating film is performed at a temperature higher than or equal to 180°
C. and lower than or equal to 350°
C. in a plasma enhanced chemical vapor deposition apparatus, andwherein the temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor. - View Dependent Claims (2, 3, 4)
-
-
5. A manufacturing method of a semiconductor device comprising a transistor, comprising:
-
forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first oxide semiconductor film over the gate insulating film; forming a second oxide semiconductor film over the first oxide semiconductor film; forming a source electrode and a drain electrode over the second oxide semiconductor film; forming an oxide insulating film over the second oxide semiconductor film; forming an oxide conductive film over the oxide insulating film; adding oxygen into the oxide insulating film through the oxide conductive film; and removing the oxide conductive film, wherein the step of forming the source electrode and the drain electrode is performed so that a region of the second oxide semiconductor film becomes thinner than the first oxide semiconductor film, and wherein a temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor. - View Dependent Claims (6, 7, 8)
-
-
9. A manufacturing method of a semiconductor device comprising a transistor, comprising:
-
forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first oxide semiconductor film over the gate insulating film; forming a second oxide semiconductor film over the first oxide semiconductor film; forming a source electrode and a drain electrode over the second oxide semiconductor film; forming an oxide insulating film over the second oxide semiconductor film; forming an oxide conductive film over the oxide insulating film; and adding oxygen into the oxide insulating film through the oxide conductive film, wherein the step of forming the source electrode and the drain electrode is performed so that a region of the second oxide semiconductor film becomes thinner than the first oxide semiconductor film, and wherein a temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor. - View Dependent Claims (10, 11, 12)
-
Specification