Semiconductor device wtih an interconnecting semiconductor electrode between first and second semiconductor electrodes and method of manufacture therefor

• US 9,837,526 B2
• Filed: 05/08/2015
• Issued: 12/05/2017
• Est. Priority Date: 12/08/2014
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Inventors: Dupuy, Philippe, Grandry, Hubert
• Primary Examiner(s): Malsawma, Lex
• Assistant Examiner(s): CROSS, XIA L
• Application Number:
  US14/707,150
• Publication Number:
  US 20160163849A1
• Time in Patent Office: 942 Days
• CPC Class Codes: H01L 21/823475 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 21/823487 with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface with a current flow parallel to the substrate surface H01L21/823431
• CPC Class Codes: H01L 27/0727 in combination with diodes, or capacitors or resistors
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/086 Impurity concentration or distribution
• CPC Class Codes: H01L 29/0865 Disposition
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor.

Claims

1. A semiconductor product, comprising:

a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode;

a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and

a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein

the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor,

wherein at least one of the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor comprises;

a lower drift region between a lower planar substrate doped to form a lower current electrode and a body doped to form a vertically extending channel,

a vertically extending lower shield plate electrode laterally adjacent the lower drift region,

an upper drift region between an upper portion doped to form an upper current electrode and the body doped to form a vertically extending channel,

a vertically extending upper shield plate electrode laterally adjacent the upper drift region, and

a vertically extending insulated gate disposed within a trench in between the vertically extending lower shield plate electrode and the vertically extending upper shield plate electrode, wherein a top surface of the vertically extending insulated gate is separated from and below a bottom surface of the vertically extending upper shield plate electrode.

2. The semiconductor product as claimed in claim 1, wherein the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor comprise channels of the same semiconductor type.

3. The semiconductor product as claimed in claim 1, wherein the interconnecting electrode is a doped semiconductor electrode, the first semiconductor electrode and second semiconductor electrode are distinct, doped portions of semiconductor material and appropriately doped portions of semiconductor material separate vertically the first semiconductor electrode and the interconnecting semiconductor electrode and appropriately doped portions of semiconductor material separate vertically the second semiconductor electrode and the interconnecting semiconductor electrode.

4. The semiconductor product as claimed in claim 1, wherein the semiconductor product has a first side and a second opposing side, and wherein the third semiconductor electrode is accessible via the first side and the first and second semiconductor electrodes are accessible via the second side.

5. The semiconductor product as claimed in claim 1, wherein the interconnecting semiconductor electrode is a common current electrode for the first vertical insulated-gate field-effect-transistor and the second vertical insulated-gate field-effect-transistor.

6. The semiconductor product as claimed in claim 1, wherein the lower drift region is doped to have the same conductivity type as the lower current electrode and a different conductivity type to the body and wherein the lower drift region has a lower dopant concentration than the body and a lower dopant concentration than the lower current electrode.

7. The semiconductor product as claimed in claim 6, wherein the upper drift region is doped to have the same conductivity type as the upper current electrode and a different conductivity type to the body and wherein the upper drift region has a lower dopant concentration than the body and a lower dopant concentration than the upper current electrode.

8. The semiconductor product as claimed in claim 1, wherein at least one of the first vertical insulated-gate field-effect-transistor and the second vertical insulated-gate field-effect-transistor is a bidirectional power metal-oxide-semiconductor field-effect-transistor.

9. The semiconductor product as claimed in claim 1, wherein the first vertical insulated gate field-effect-transistor provides first and second electrically controllable diodes.

10. The semiconductor product as claimed in claim 1, wherein a current path between the first semiconductor electrode and the second semiconductor electrode consists of only the first vertical insulated-gate field-effect-transistor and the second vertical insulated-gate field-effect-transistor which share the third semiconductor electrode as a common current electrode and wherein the current path comprises no other diode-effect device.

11. The semiconductor product as claimed in claim 1, comprising:

a second interconnecting semiconductor electrode defining a fourth semiconductor electrode;

a third switch, between the first semiconductor electrode and the fourth semiconductor electrode, provided by a third vertical insulated-gate field-effect-transistor; and

a fourth switch, between the second semiconductor electrode and the fourth semiconductor electrode, provided by a fourth vertical insulated-gate field-effect-transistor, wherein

the second interconnecting electrode interconnects the third vertical insulated gate field-effect-transistor and the fourth vertical insulated gate field-effect-transistor,

and wherein the first and second semiconductor electrodes form a first pair of semiconductor electrodes and wherein the third and fourth semiconductor electrodes form a second pair of semiconductor electrodes, wherein one of the first pair or the second pair of semiconductor electrodes is for receiving power and the other of the first pair or the second pair of semiconductor electrodes is for delivering power.

12. The semiconductor product as claimed in claim 11, wherein each of the first, second, third and fourth vertical insulated-gate field-effect-transistors comprises a body for providing a channel, wherein each body is a distinctly doped region of the same semiconductor material.

13. The semiconductor product as claimed in claim 11, wherein each of first, second, third and fourth switches comprises a single insulated-gate field-effect-transistor.

14. The semiconductor product as claimed in claim 11, configured as an H-bridge.