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Manufacturing method of semiconductor device

  • US 9,837,545 B2
  • Filed: 02/16/2016
  • Issued: 12/05/2017
  • Est. Priority Date: 06/10/2011
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor layer comprising a first region, a second region, and a third region;

    a gate electrode layer over the oxide semiconductor layer;

    a side wall insulator on a side surface of the gate electrode layer; and

    a nitride layer over the oxide semiconductor layer, the gate electrode layer and the side wall insulator,wherein the nitride layer comprises a metal element,wherein the second region is between the first region and the third region,wherein the first region comprises a channel formation region,wherein the channel formation region and the gate electrode layer overlap each other,wherein the side wall insulator and the second region overlap each other,wherein the second region comprises argon,wherein the third region is in contact with the nitride layer,wherein the third region comprises argon and the metal element,wherein a resistance of the second region is lower than a resistance of the first region,wherein a resistance of the third region is lower than the resistance of the second region, andwherein a concentration of the metal element of the third region is higher than a concentration of the metal element of the channel formation region.

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