Light emitting diode package and method of manufacture

• US 9,837,583 B2
• Filed: 01/07/2015
• Issued: 12/05/2017
• Est. Priority Date: 03/06/2011
• Status: Active Grant

• Current Assignee: LED Wafer Solutions LLC
• Original Assignee: Mordehai Margalit
• Inventors: Margalit, Mordehai
• Primary Examiner(s): Wilczewski, Mary
• Assistant Examiner(s): Peterson, Erik T
• Application Number:
  US14/591,627
• Publication Number:
  US 20150108529A1
• Time in Patent Office: 1,063 Days
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0012 p-i-n devices
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/647 : the elements conducting electric current to or from the semiconductor body

Abstract

A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

Claims

1. A light emitting device, comprising:

an optically transparent cover substrate;

an optically transparent layer contacting a bottom surface of said optically transparent cover substrate, said optically transparent layer including an optically definable material wherein said optically definable material is disposed in a portion of said optically transparent layer;

a semiconductor LED including a LED carrier layer, a positively-doped region, an intrinsic region, and a negatively-doped region, wherein said intrinsic region is between said positively-doped region and said negatively-doped region, said LED carrier layer disposed on said negatively-doped region, said LED carrier layer contacting a first portion of a bottom surface of said optically transparent layer;

a passivation layer disposed on said semiconductor LED and on an exposed portion of said bottom surface of said optically transparent layer;

a first electrical contact disposed in a first contact hole defined in said passivation layer, said first electrical contact in electrical communication with said positively-doped region; and

a second electrical contact disposed in a second contact hole defined in said passivation layer and said semiconductor LED, said second electrical contact in electrical communication with said negatively-doped region,

wherein a first surface of said semiconductor LED has a first length along a horizontal axis, said horizontal axis parallel to said first surface of said semiconductor LED, and

wherein said portion of said optically transparent layer has a second length with respect to said horizontal axis, said second length less than said first length.

2. The light emitting device of claim 1 wherein said optically definable material is embedded in said portion of optically transparent layer.

3. The light emitting device of claim 1 wherein said optically transparent layer is comprised of silicone.

4. The light emitting device of claim 3 wherein said optically definable material is comprised of phosphor.

5. The light emitting device of claim 1 wherein said first and second electrical contacts are comprised of at least one of aluminum, gold, silver, and copper.

6. The light emitting device of claim 1 wherein said passivation layer is comprised of at least one of SiO₂, SiN, AlN, Al₂O₃, an epoxy, and an electrophoretic deposited paint.

7. The light emitting device of claim 1 further comprising an electroplated material disposed on said first and second electrical contacts.

8. A light emitting device, comprising:

an optically transparent cover substrate;

an optically transparent layer contacting a bottom surface of said optically transparent cover substrate, said optically transparent layer including an optically definable material wherein said optically definable material is disposed in a portion of said optically transparent layer;

a semiconductor LED including a LED carrier layer, a positively-doped region, an intrinsic region, and a negatively-doped region, wherein said intrinsic region is between said positively-doped region and said negatively-doped region, said LED carrier layer disposed on said negatively-doped region, said LED carrier layer contacting a first portion of a bottom surface of said optically transparent layer;

a passivation layer disposed on said semiconductor LED and on an exposed portion of said bottom surface of said optically transparent layer;

a first electrical contact disposed in a first contact hole defined in said passivation layer, said first electrical contact in electrical communication with said positively-doped region; and

a second electrical contact disposed in a second contact hole defined in said passivation layer and said semiconductor LED, said second electrical contact in electrical communication with said negatively-doped region,

wherein said optically transparent layer has a first height along a vertical axis, said vertical axis orthogonal to said bottom surface of said optically transparent layer, and

wherein said portion of said optically transparent layer has a second height along said vertical axis, said second height less than said first height.

9. The light emitting device of claim 8 wherein said optically definable material is embedded in said portion of optically transparent layer.

10. The light emitting device of claim 8 wherein said optically transparent layer is comprised of silicone.

11. The light emitting device of claim 10 wherein said optically definable material is comprised of phosphor.

12. The light emitting device of claim 8 wherein said first and second electrical contacts are comprised of at least one of aluminum, gold, silver, and copper.

13. The light emitting device of claim 8 wherein said passivation layer is comprised of at least one of SiO₂, SiN, AlN, Al₂O₃, an epoxy, and an electrophoretic deposited paint.

14. The light emitting device of claim 8 further comprising an electroplated material disposed on said first and second electrical contacts.