All-silicon electrode capacitive transducer on a glass substrate
First Claim
1. A capacitive transducer comprising:
- a movable silicon microstructure coupled to a glass substrate, the movable silicon microstructure having a movable silicon electrode, the glass substrate having a top surface with at least one recess that includes a first recess portion and a second recess portion, the first recess portion having a first depth extending from the movable silicon microstructure to a first surface in the first recess portion, the second recess portion having a second depth that is greater than the first depth, the second depth extending from the movable silicon electrode to a second surface in the second recess portion, the movable silicon electrode having a first flat surface parallel to a plane of the top surface of the glass substrate, the movable silicon electrode having a first electronic work function; and
a stationary silicon electrode bonded to the first surface in the first recess portion, the stationary silicon electrode located under the movable silicon electrode, the stationary silicon electrode configured to sense or actuate displacement of the movable silicon microstructure, wherein the stationary silicon electrode has a second flat surface parallel to the first flat surface, the stationary silicon electrode having a second electronic work function equal to the first electronic work function, the stationary silicon electrode having an overhang that extends beyond the first surface in the first recess portion such that the overhang is located between the second surface of the second recess portion and the movable silicon microstructure.
1 Assignment
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Accused Products
Abstract
An all-silicon electrode capacitive transducer comprising: a movable silicon microstructure coupled to a glass substrate, the movable silicon microstructure having a movable silicon electrode, the glass substrate having a top surface and at least one recess, the movable silicon electrode having a first flat surface parallel to a plane of the top surface of the glass substrate, the movable silicon electrode having a first electronic work function; and a stationary silicon electrode coupled to a glass substrate, the stationary silicon electrode located adjacent to the movable silicon electrode, the stationary silicon electrode configured to sense or actuate displacement of the movable silicon microstructure, wherein the stationary silicon electrode has a second flat surface parallel to the first flat surface, the stationary silicon electrode having a second electronic work function equal to the first electronic work function.
54 Citations
13 Claims
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1. A capacitive transducer comprising:
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a movable silicon microstructure coupled to a glass substrate, the movable silicon microstructure having a movable silicon electrode, the glass substrate having a top surface with at least one recess that includes a first recess portion and a second recess portion, the first recess portion having a first depth extending from the movable silicon microstructure to a first surface in the first recess portion, the second recess portion having a second depth that is greater than the first depth, the second depth extending from the movable silicon electrode to a second surface in the second recess portion, the movable silicon electrode having a first flat surface parallel to a plane of the top surface of the glass substrate, the movable silicon electrode having a first electronic work function; and a stationary silicon electrode bonded to the first surface in the first recess portion, the stationary silicon electrode located under the movable silicon electrode, the stationary silicon electrode configured to sense or actuate displacement of the movable silicon microstructure, wherein the stationary silicon electrode has a second flat surface parallel to the first flat surface, the stationary silicon electrode having a second electronic work function equal to the first electronic work function, the stationary silicon electrode having an overhang that extends beyond the first surface in the first recess portion such that the overhang is located between the second surface of the second recess portion and the movable silicon microstructure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A system for a capacitive transducer, comprising:
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an all-silicon electrode capacitive transducer comprising; a movable silicon microstructure coupled to a glass substrate, the movable silicon microstructure having a movable silicon electrode, the glass substrate having a top surface with at least one recess that includes a first recess portion and a second recess portion, the first recess portion having a first depth extending from the movable silicon microstructure to a first surface in the first recess portion, the second recess portion having a second depth that is greater than the first depth, the second depth extending from the movable silicon electrode to a second surface in the second recess portion, the movable silicon electrode having a first flat surface parallel to a plane of the top surface of the glass substrate, the movable silicon electrode having a first electronic work function; and a stationary silicon electrode bonded to the first surface in the first recess portion, the stationary silicon electrode located under the movable silicon electrode, the stationary silicon electrode configured to sense or actuate displacement of the movable silicon microstructure, wherein the stationary silicon electrode has a second flat surface parallel to the first flat surface, the stationary silicon electrode having a second electronic work function equal to the first electronic work function, the stationary silicon electrode having a first overhang that extends beyond the first surface in the first recess portion such that the first overhang is located between the second surface of the second recess portion and the movable silicon microstructure; a measurement unit coupled to the all-silicon electrode capacitive transducer, the measurement unit configured to read a signal from the all-silicon electrode capacitive transducer; and an interface device coupled to the measurement unit and configured to indicate a result indicative of the signal from the all-silicon electrode capacitive transducer. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification