Plasma chamber having an upper electrode having controllable valves and a method of using the same
First Claim
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1. A plasma treatment apparatus comprising:
- a vapor chamber;
an upper electrode assembly comprising;
a gas distribution plate having a plurality of holes in a bottom surface thereof; and
an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle, the at least one gas nozzle is an adjustable nozzle, and the at least one gas nozzle is separated from the gas distribution plate by a gap;
a measurement device configured to measure a thickness profile of a wafer; and
a controller configured to generate a control signal for processing a subsequent wafer based on the measured thickness profile,wherein the at least one controllable valve is configured to be adjusted based on the control signal.
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Abstract
This description relates to a plasma treatment apparatus including a vapor chamber, a gas supply and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes in a bottom surface thereof and an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle. The plasma treatment apparatus further includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal. A control system and a method of controlling a controllable valve are also described.
44 Citations
20 Claims
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1. A plasma treatment apparatus comprising:
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a vapor chamber; an upper electrode assembly comprising; a gas distribution plate having a plurality of holes in a bottom surface thereof; and an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle, the at least one gas nozzle is an adjustable nozzle, and the at least one gas nozzle is separated from the gas distribution plate by a gap; a measurement device configured to measure a thickness profile of a wafer; and a controller configured to generate a control signal for processing a subsequent wafer based on the measured thickness profile, wherein the at least one controllable valve is configured to be adjusted based on the control signal. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A plasma treatment apparatus comprising:
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a wafer treatment device, the wafer treatment device comprising; a vapor chamber; and an upper electrode assembly comprising; a gas distribution plate having a plurality of holes in a bottom surface thereof; and an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle, the at least one gas nozzle is an adjustable nozzle, and the at least one gas nozzle is separated from the gas distribution plate by a gap; and a control system connected to the wafer treatment device, the control system comprising; a measurement device configured to measure a thickness profile of a wafer; and a controller configured to generate a control signal for processing a subsequent wafer based on the measured thickness profile, wherein the at least one controllable valve is configured to be adjusted based on the control signal. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A plasma treatment apparatus comprising:
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a vapor chamber; an upper electrode assembly comprising; a gas distribution plate having a plurality of holes in a bottom surface thereof; and an upper electrode having a plurality of gas nozzles and a controllable valve connected to each corresponding gas nozzle of the plurality of gas nozzles for controlling a flow of gas from a gas supply to the holes via each gas nozzle of the plurality of gas nozzles, wherein a discharge direction of at least one gas nozzle of the plurality of gas nozzles is adjustable, and the at least one gas nozzle is separated from the gas distribution plate by a gap; a measurement device configured to measure a thickness profile of a wafer; and a controller configured to generate a control signal for processing a subsequent wafer based on the measured thickness profile, wherein each gas nozzle of the plurality of gas nozzles is configured to be adjusted based on the control signal. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification