Methods for etch of SiN films
First Claim
1. A method of etching a patterned substrate, the method comprising:
- transferring the patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate has exposed silicon nitride and exposed silicon;
flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;
flowing water vapor into the substrate processing region without first passing the water vapor through any remote plasma; and
etching the exposed silicon nitride.
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Abstract
A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
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Citations
10 Claims
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1. A method of etching a patterned substrate, the method comprising:
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transferring the patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate has exposed silicon nitride and exposed silicon; flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents; flowing water vapor into the substrate processing region without first passing the water vapor through any remote plasma; and etching the exposed silicon nitride. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of etching a patterned substrate, the method comprising:
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transferring the patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate has exposed silicon nitride and exposed silicon; flowing nitrogen trifluoride into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents; flowing water vapor into the substrate processing region without first passing the water vapor through the remote plasma region; etching the exposed silicon nitride, wherein a temperature of the patterned substrate is between about 40°
C. and about 80°
C. during the operation of etching the exposed silicon nitride; andremoving the patterned substrate from the substrate processing region.
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Specification