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Integrated circuit device featuring an antifuse and method of making same

  • US 9,842,802 B2
  • Filed: 03/27/2014
  • Issued: 12/12/2017
  • Est. Priority Date: 06/29/2012
  • Status: Expired due to Fees
First Claim
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1. An integrated circuit, comprising:

  • an antifuse having a conductor-insulator-conductor structure, the antifuse comprisinga top conductor plate,a dielectric layer,a bottom conductor plate, the dielectric layer interposed between the top and bottom conductor plates, andat least one metal line comprising a surface irregularity, positioned under the bottom conductor plate, the surface irregularity being configured to cause weakness in at least the bottom conductor plate to lower a dielectric breakdown voltage VBD of the antifuse,wherein the antifuse configured to transition from an open circuit state to a closed circuit state if a programming voltage Vpp greater than or equal to the VBD of the antifuse is applied to the top conductor plate and the bottom conductor plate, andwherein the top conductor plate has a maximum width WMAX and a maximum length LMAX, and the top conductor plate has a total edge length LTE according to an equation given by
    LTE>

    2*(WMAX+LMAX).

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