Image sensor with buried light shield and vertical gate
First Claim
1. An image sensor comprising:
- a first substrate layer comprising;
a photodetector disposed on a first surface of the first substrate layer;
a second substrate layer comprising;
a first storage region disposed adjacent to a second surface of the second substrate, the second surface opposite the first surface;
a second storage region disposed in the second substrate layer; and
a buried light shield disposed between the first and second substrate layers, wherein the buried light shield is over the first and second storage regions.
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Accused Products
Abstract
A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.
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Citations
20 Claims
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1. An image sensor comprising:
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a first substrate layer comprising; a photodetector disposed on a first surface of the first substrate layer; a second substrate layer comprising; a first storage region disposed adjacent to a second surface of the second substrate, the second surface opposite the first surface; a second storage region disposed in the second substrate layer; and a buried light shield disposed between the first and second substrate layers, wherein the buried light shield is over the first and second storage regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An image sensor comprising:
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a sensing layer formed in a first substrate, the sensing layer comprising; a photodetector; a storage region; and a buried light shield disposed below the photodetector and over storage region; a second substrate attached to the first substrate, the second substrate comprising a contact pad; a vertical gate extending between the first substrate through the buried light shield to the contact pad; and a transfer channel disposed adjacent to the vertical gate operatively connecting the photodetector to the storage region and providing a charge transfer path between the photodetector and the storage region. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification