Semiconductor device having an oxide semiconductor film and a metal oxide film
First Claim
1. A semiconductor device comprising:
- a first gate electrode;
a first gate insulating film covering the first gate electrode;
a first metal oxide film over and in contact with the first gate insulating film;
an oxide semiconductor film over and in contact with the first metal oxide film and overlapping with the first gate electrode;
source and drain electrodes in contact with the oxide semiconductor film;
a second metal oxide film over the source and drain electrodes, wherein the second metal oxide film is in contact with the oxide semiconductor film;
a second gate insulating film over the second metal oxide film; and
a second gate electrode over the second gate insulating film,wherein each of the first metal oxide film and the second metal oxide film comprises one or more constituent metal elements of the oxide semiconductor film, andwherein the first gate electrode is overlapped with the second gate electrode.
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Accused Products
Abstract
The oxide semiconductor film has the top and bottom surface portions each provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film. An insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is further formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. The oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by removing impurities such as hydrogen, moisture, a hydroxyl group, and hydride from the oxide semiconductor and supplying oxygen which is a major constituent of the oxide semiconductor and is simultaneously reduced in a step of removing impurities.
194 Citations
10 Claims
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1. A semiconductor device comprising:
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a first gate electrode; a first gate insulating film covering the first gate electrode; a first metal oxide film over and in contact with the first gate insulating film; an oxide semiconductor film over and in contact with the first metal oxide film and overlapping with the first gate electrode; source and drain electrodes in contact with the oxide semiconductor film; a second metal oxide film over the source and drain electrodes, wherein the second metal oxide film is in contact with the oxide semiconductor film; a second gate insulating film over the second metal oxide film; and a second gate electrode over the second gate insulating film, wherein each of the first metal oxide film and the second metal oxide film comprises one or more constituent metal elements of the oxide semiconductor film, and wherein the first gate electrode is overlapped with the second gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification