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Semiconductor device

  • US 9,842,939 B2
  • Filed: 09/08/2016
  • Issued: 12/12/2017
  • Est. Priority Date: 05/21/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an insulating layer;

    an oxide semiconductor layer over and in direct contact with the insulating layer;

    a source electrode layer electrically connected to the oxide semiconductor layer;

    a drain electrode layer electrically connected to the oxide semiconductor layer; and

    a gate insulating layer over the oxide semiconductor layer,wherein;

    each of the source electrode layer and the drain electrode layer contains tantalum and nitrogen,the gate insulating layer contains silicon and oxygen;

    the insulating layer is a stacked layer of a first layer and a second layer;

    the first layer contains hafnium and oxygen;

    the second layer contains silicon, oxygen and nitrogen; and

    a concentration of hydrogen in a part of the insulating layer is greater than zero and less than 6×

    1020 atoms/cm3.

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