Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
First Claim
1. A light emitting die, comprising:
- a light emitting structure;
a silicon substrate spaced apart from the light emitting structure;
a bonding stack between the light emitting structure and the silicon substrate, the bonding stack mechanically coupling the light emitting structure to the silicon substrate,wherein the bonding stack includes;
a barrier material on the light emitting structure;
a bonding material spaced apart from the barrier material, the bonding material containing nickel (Ni) and being the outermost layer of the bonding stack,a mirror material directly between the barrier material and the bonding material; and
a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material.
5 Assignments
0 Petitions
Accused Products
Abstract
Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
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Citations
27 Claims
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1. A light emitting die, comprising:
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a light emitting structure; a silicon substrate spaced apart from the light emitting structure; a bonding stack between the light emitting structure and the silicon substrate, the bonding stack mechanically coupling the light emitting structure to the silicon substrate, wherein the bonding stack includes; a barrier material on the light emitting structure; a bonding material spaced apart from the barrier material, the bonding material containing nickel (Ni) and being the outermost layer of the bonding stack, a mirror material directly between the barrier material and the bonding material; and a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a lighting emitting device, comprising:
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forming a light emitting structure on a growth substrate material; depositing a barrier material, a mirror material, and a bonding material on the light emitting structure, the bonding material containing nickel (Ni); placing the light emitting structure onto a silicon carrier substrate such that the bonding material directly contacts the silicon carrier substrate; and bonding the light emitting structure and the silicon carrier substrate via forming a nickel silicide (NiSi) material at an interface between the silicon carrier substrate and the bonding material. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a lighting emitting device, comprising:
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depositing a barrier material, a mirror material, and a bonding material on a light emitting structure, the bonding material containing nickel (Ni); contacting the deposited bonding material with a carrier containing silicon (Si); directly reacting the nickel (Ni) in the bonding material with the silicon (Si) in the carrier at a bonding temperature, under a bonding pressure, and for a bonding period; and adjusting at least one of the bonding temperature, the bonding period, and the bonding pressure based on a target thickness of the bonding material remaining after the reaction. - View Dependent Claims (18, 19, 20, 21)
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22. A method of manufacturing a plurality of light emitting devices, comprising:
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forming a plurality of light emitting dies on a growth substrate via epitaxial growth; depositing a barrier material, a mirror material, and a bonding material over the growth substrate in series, the bonding material containing nickel (Ni); attaching the growth substrate to a carrier material containing silicon (Si) such that the bonding material directly contacts a surface of the carrier material; forming nickel silicide (NiSi) at an interface between the carrier and the bonding material, thereby mechanically coupling the plurality of light emitting dies to the carrier material; and singulating the plurality of light emitting dies mechanically coupled to the carrier material to form a plurality of light emitting devices. - View Dependent Claims (23, 24, 25)
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26. A method of manufacturing a plurality of light emitting devices, comprising:
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forming a plurality of light emitting dies on a substrate via epitaxial growth by; sequentially depositing N-type gallium nitride (GaN), GaN/indium gallium nitride (InGaN) multiple quantum wells, and P-type GaN on the substrate; forming a plurality of openings in the deposited N-type GaN, GaN/InGaN multiple quantum wells, and P-type GaN, the individual openings separating two adjacent light emitting dies; and depositing a passivation material into the individual openings, the passivation material being in contact with at least the N-type GaN and the GaN/InGaN multiple quantum wells; depositing a barrier material, a mirror material, and a bonding material on the substrate in series, the bonding material containing nickel (Ni), wherein the deposited barrier material, mirror material, and bonding material each include a first portion on the P-type GaN and a second portion in the openings; contacting the bonding layer with a carrier, wherein the bonding material is in direct contact with a surface of the carrier, the carrier containing silicon (Si); forming nickel silicide (NiSi) at an interface between the carrier and the bonding material by at least partially consuming the carrier and the bonding material, thereby mechanically coupling the plurality of light emitting dies to the carrier; and singulating the plurality of light emitting dies mechanically coupled to the carrier to form a plurality of light emitting devices. - View Dependent Claims (27)
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Specification