Display pixel with redundant element and display panel

• US 9,847,047 B2
• Filed: 12/28/2015
• Issued: 12/19/2017
• Est. Priority Date: 12/04/2015
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Wu, Ming-Hsien, Fang, Yen-Hsiang, Tsai, Yao-Jun
• Primary Examiner(s): Sternbane, Larry
• Application Number:
  US14/979,543
• Publication Number:
  US 20170162091A1
• Time in Patent Office: 722 Days
• CPC Class Codes: G09G 2300/0439 Pixel structures
• CPC Class Codes: G09G 2320/0233 Improving the luminance or brightness uniformity across the screen
• CPC Class Codes: G09G 2320/0295 by monitoring each display pixel
• CPC Class Codes: G09G 2330/08 Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
• CPC Class Codes: G09G 2330/10 Dealing with defective pixels
• CPC Class Codes: G09G 3/006 Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays testing individual LED's G01R31/2635; testing lamps G01R31/44; testing of optical features of LCD displays G02F1/1309
• CPC Class Codes: G09G 3/32 semiconductive, e.g. using light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

A display pixel suitable for being arranged on a carrier is provided. The display pixel includes a plurality of light-emitting diode chips. The light-emitting diode chips are disposed on and electrically connected to the carrier. Each of the light-emitting diode chips respectively serves as a sub-pixel and includes a semiconductor device layer, and the semiconductor device layer includes a display light-emitting mesa and at least one redundant light-emitting mesa. During a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light. A display panel including a plurality of the display pixels mentioned above is also provided.

Claims

1. A display pixel adapted to be arranged on a carrier, the display pixel comprising:

a plurality of light-emitting diode chips arranged on and electrically connected to the carrier, each of the light-emitting diode chips respectively acting as a sub-pixel and comprising a semiconductor device layer in a single light-emitting diode chip among the light-emitting diode chips, the semiconductor device layer comprising a display light-emitting mesa and at least one redundant light-emitting mesa, wherein during a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light;

the redundant light-emitting mesa configured to emit light in place of the display light-emitting mesa when the display light-emitting mesa is disabled.

2. The display pixel as recited in claim 1, wherein a side length of each of the light-emitting diode chips is shorter than or equal to 100 micrometers.

3. The display pixel as recited in claim 1, wherein the semiconductor device layer in each of the light-emitting diode chips comprises:

a first-type doped semiconductor layer;

a first light-emitting layer and a second light-emitting layer separated from each other and arranged on a portion of the first-type doped semiconductor layer; and

a second-type doped semiconductor layer comprising a first semiconductor pattern and a second semiconductor pattern separated from each other, wherein the first semiconductor pattern is located on the first light-emitting layer, the second semiconductor pattern is located on the second light-emitting layer, the first semiconductor pattern and the first light-emitting layer constitute at least one portion of the display light-emitting mesa, and the second semiconductor pattern and the second light-emitting layer constitute at least one portion of the at least one redundant light-emitting mesa.

4. The display pixel as recited in claim 1, wherein the light-emitting diode chips emit a plurality of color beams.

5. A display panel comprising:

a carrier;

a plurality of display pixels adapted to be arranged on the carrier, each display pixel comprising;

a plurality of light-emitting diode chips arranged on and electrically connected to the carrier, each of the light-emitting diode chips respectively acting as a sub-pixel and comprising a semiconductor device layer in a single light-emitting diode chip among the light-emitting diode chips, the semiconductor device layer comprising a display light-emitting mesa and at least one redundant light-emitting mesa, wherein during a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light;

the redundant light-emitting mesa configured to emit light in place of the display light-emitting mesa when the display light-emitting mesa is disabled;

wherein the plurality of display pixels are arranged in an array on the carrier.

6. The display panel as recited in claim 5, wherein the carrier comprises a circuit board or a complementary metal oxide semiconductor integrated circuit.

7. The display panel as recited in claim 5, wherein a side length of each of the light-emitting diode chips is shorter than or equal to 100 micrometers.

8. The display panel as recited in claim 7, wherein the carrier comprises a circuit board or a complementary metal oxide semiconductor integrated circuit.

9. The display panel as recited in claim 5, wherein the semiconductor device layer in each of the light-emitting diode chips comprises:

a first-type doped semiconductor layer;

a first light-emitting layer and a second light-emitting layer separated from each other and arranged on a portion of the first-type doped semiconductor layer; and

a second-type doped semiconductor layer comprising a first semiconductor pattern and a second semiconductor pattern separated from each other, wherein the first semiconductor pattern is located on the first light-emitting layer, the second semiconductor pattern is located on the second light-emitting layer, the first semiconductor pattern and the first light-emitting layer constitute at least one portion of the display light-emitting mesa, and the second semiconductor pattern and the second light-emitting layer constitute at least one portion of the at least one redundant light-emitting mesa.

10. The display panel as recited in claim 9, wherein the carrier comprises a circuit board or a complementary metal oxide semiconductor integrated circuit.

11. The display panel as recited in claim 5, wherein the light-emitting diode chips emit a plurality of color beams.

12. The display panel as recited in claim 11, wherein the carrier comprises a circuit board or a complementary metal oxide semiconductor integrated circuit.

13. A method of driving a display panel, comprising:

providing a display panel, the display panel comprising a carrier and a plurality of display pixels arranged in an array on the carrier, each display pixel comprising;

a plurality of light-emitting diode chips arranged on and electrically connected to the carrier, each of the light-emitting diode chips respectively acting as a sub-pixel and comprising a semiconductor device layer in a single light-emitting diode chip among the light-emitting diode chips, the semiconductor device layer comprising a display light-emitting mesa and at least one redundant light-emitting mesa, wherein during a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light;

the redundant light-emitting mesa configured to emit light in place of the display light-emitting mesa when the display light-emitting mesa is disabled;

driving the display pixels by the carrier and detecting whether the display light-emitting mesas in the display pixels perform a display function normally; and

if at least one of the display pixels is deemed as an abnormal display pixel, disabling the display light-emitting mesa in the abnormal display pixel and enabling the at least one redundant light-emitting mesa in the abnormal display pixel.

14. The method as recited in claim 13, wherein each of the display pixels comprises a wafer-level chip scale package.

15. The method as recited in claim 13, wherein a method of detecting whether the display light-emitting mesas in the display pixels perform the display function normally comprises:

measuring a current-voltage correlation of the display light-emitting mesas to determine whether abnormal open circuit or short circuit occurs in each of the display light-emitting mesas.

16. The method as recited in claim 13, wherein a control circuit of the carrier detects whether the display light-emitting mesas in the display pixels perform the display function normally.

17. The method as recited in claim 13, wherein a side length of each of the light-emitting diode chips is shorter than or equal to 100 micrometers.

18. The method as recited in claim 13, wherein the semiconductor device layer in each of the light-emitting diode chips comprises:

a first-type doped semiconductor layer;

a first light-emitting layer and a second light-emitting layer separated from each other and arranged on a portion of the first-type doped semiconductor layer; and

a second-type doped semiconductor layer comprising a first semiconductor pattern and a second semiconductor pattern separated from each other, wherein the first semiconductor pattern is located on the first light-emitting layer, the second semiconductor pattern is located on the second light-emitting layer, the first semiconductor pattern and the first light-emitting layer constitute at least one portion of the display light-emitting mesa, and the second semiconductor pattern and the second light-emitting layer constitute at least one portion of the at least one redundant light-emitting mesa.

19. The method as recited in claim 13, wherein the light-emitting diode chips emit a plurality of color beams.