Method of fabricating semiconductor device

• US 9,847,266 B2
• Filed: 05/26/2016
• Issued: 12/19/2017
• Est. Priority Date: 06/29/2015
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Tae-Hwa, Park, Chanhoon, Lee, Dongsoo, Lee, Jaehyun, Lee, Hyung Joo, Jeon, Kangmin, Han, Kyounghoon
• Primary Examiner(s): Page, Dale E
• Assistant Examiner(s): JEFFERSON, QUOVAUNDA
• Application Number:
  US15/165,684
• Publication Number:
  US 20160379903A1
• Time in Patent Office: 572 Days
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/28008 Making conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32135 by vapour etching only
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H10B 41/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels

Abstract

A method of fabricating a semiconductor device includes etching a stack of first-material layers and second-material layers alternately disposed one on another on a substrate. An upper portion of the stack is etched using an end point detection (EPD) signal of an etching reaction gas, and a function of an injection time of an etchant with respect to a depth of an opening is obtained while the upper portion of the stack is etched. A lower portion of the stack is etched using the obtained function.

Claims

1. A method of fabricating a semiconductor device, the method comprising:

forming a stack structure including first-material layers and second-material layers alternately disposed one on another on a substrate, the first-material layers being etchable by etching gas of a first etchant, and the second-material layers being etchable by etching gas of a second etchant;

forming a mask pattern on the stack structure;

a first process of etching an upper portion the stack structure using the mask pattern as an etch mask to form an opening through the upper portion of the stack structure,

wherein the first process comprises etching respective ones of the first- and second-material layers with the first and second etchants, respectively, generating end point detection (EPD) signals by monitoring first and second etching reaction gases resulting from the etching of said respective ones of the first- and second-material layers, determining end points of the etching of said respective ones of the first- and second-material layers with the first and second etchants from the end point detection (EPD) signals, and using the end points to discern a first set of etch recipes under which said respective ones of the first- and second-material layers have been etched;

deriving first and second functions of injection times of the first and second etchants, respectively, each with respect to a depth of the opening during the first process; and

a second process of etching a lower portion of the stack structure using the mask pattern as an etch mask to extend the opening in the upper portion of the stack structure through the lower portion of the stack structure and thereby expose the substrate,

wherein the second process comprises creating a second set of etch recipes based on the first and second functions of injection times of the first and second etchants, respectively, and etching respective ones of the first- and second-material layers in the lower portion of the stack structure under the second set of etch recipes,

whereby the etch recipes of the first set under which the first- and second-material layers of the upper portion of the stack structure are etched are respectively different from the etch recipes of the second set under which the first and second-material layers of the lower portion of the stack structure are etched,

wherein the first process comprises

injecting the first etchant into a process chamber to etch a n^th first-material layer of the stack structure;

generating a first EPD signal from the first etching reaction gas as the n^th first-material layer is etched by the first etchant;

comparing a value of the first EPD signal with a first reference value;

stopping the injecting of the first etchant when the value of the first EPD signal is greater than the first reference value, and discerning a n^th etch recipe of the first set of etch recipes under which the n^th first-material layer was etched using the first etchant up until a time the injecting of the first etchant was stopped;

storing the n^th etch recipe under which the n^th first-material layer was etched, in a readable memory;

injecting the second etchant into the process chamber to etch a m^th second-material layer of the stack structure;

generating a second EPD signal from the second etching reaction gas as the m^th second-material layer is etched by the second etchant;

comparing a value of the second EPD signal with the first reference value;

stopping the injecting of the second etchant when the value of the second EPD signal is greater than the first reference value, and discerning a m^th etch recipe of the first set of etch recipes under which the m^th first-material layer was etched using the second etchant up until a time the injecting of the second etchant was stopped; and

storing the m^th etch recipe under which the m^th first-material layer was etched, in the readable memory,

wherein the first process is terminated when at least one of the values of the first and second EPD signals is less than the first reference value.

2. The method of claim 1, wherein the value of the first EPD signal is a difference between a magnitude of a start point of the first EPD signal and a magnitude of a peak of the first EPD signal, and

the value of the second EPD signal is a difference between a magnitude of a start point of the second EPD signal and a magnitude of a peak of the second EPD signal.

3. The method of claim 1, wherein the second process comprises:

injecting the first etchant into the process chamber under an etch recipe of the second set of etch recipes based on the first function to etch an (n−

k)^th one of the first-material layers, and stopping the injecting of the first etchant injected to etch the (n−

k)^th one of the first-material layers at a time determined by the first function, and

injecting the second etchant into the process chamber under an etch recipe of the second set based on the second function to etch an (m−

k)^th one of the second-material layers, and stopping the injecting of the second etchant injected to etch the (m−

k)^th one of the second-material layers at a time determined by the second function.

4. The method of claim 1, further comprising:

deriving functions of amounts of the first and second etchants injected into the process chamber with respect to the depth of the opening during the first process; and

deriving functions of amounts of the etching gases in the first and second etchants with respect to the depth of the opening during the first process.

5. A method of fabricating a semiconductor device, the method comprising:

forming a stack structure including first-material layers and second-material layers alternately stacked on a substrate, the first-material layers being etchable by a first etchant, and the second-material layers being etchable by a second etchant;

forming a mask pattern on the stack structure;

etching an upper portion of the stack structure using the mask pattern as an etch mask by a first process to form an opening;

etching an intermediate portion of the stack structure using the mask pattern as an etch mask by a second process to extend the opening; and

etching a lower portion of the stack structure using the mask pattern as an etch mask by a third process to further extend the opening to such an extent that the opening exposes the substrate,

wherein, in each of the first and second processes, recipes of the first and second etchants are changed using first and second end point detection (EPD) signals representative of amounts of first and second etching reaction gases produced as a result of the first and second processes, respectively, to etch first and second-material layers of each of the upper and intermediate portions,

wherein functions of the recipes of the first and second etchants with respect to the depth of the opening are obtained during the first and second processes,

wherein, in the third process, the recipes of the first and second etchants are changed using the functions obtained during the first and second processes to etch the first and second-material layers of the lower portion,

wherein the first process comprises

injecting the first etchant into a process chamber to etch a n^th one of the first-material layers;

comparing a value of the first EPD signal, produced as a result of the etching of the n^th one of the first-material layers, with a first reference value;

stopping the injecting of the first etchant when the value of the first EPD signal is greater than the first reference value;

storing the recipe of the first etchant injected to etch the n^th one of the first-material layers;

injecting the second etchant into the process chamber to etch a m^th one of the second-material layers;

comparing a value of the second EPD signal, produced as a result of the etching of the m^th one of the second-material layers, with the first reference value;

stopping the injecting of the second etchant when the value of the second EPD signal is greater than the first reference value; and

storing the recipe of the second etchant injected to etch the m^th one of the second-material layers;

wherein the second process comprises

injecting the first etchant into the process chamber to etch an (n−

d)^th one of the first-material layers;

comparing a value of the first EPD signal, representative of an amount of the first etching reaction gas produced by the etching of the (n−

d)^th one of the first-material layers, with a second reference value when the value of the first EPD signal corresponding to the (n−

d)^th first-material layer is greater than the first reference value;

stopping the injecting of the first etchant injected to etch the (n−

d)^th one of the first-material layers and storing the recipe of the first etchant injected to etch the (n−

d)^th one of the first-material layers when the value of said first EPD signal, representative of the amount of first etching reaction gas produced by the etching of the (n−

d)^th one of the first-material layers, is less than the second reference value;

changing the recipe of the first etchant used to etch the (n−

d)^th one of the first-material layers;

injecting the second etchant into the process chamber to etch an (m−

d)^th one of the second-material layers;

comparing a value of the second EPD signal, representative of an amount of the second etching reaction gas produced by the etching of the (m−

d)^th one of the second-material layers, with the second reference value when said value of the second EPD signal corresponding to the (m−

d)^th second-material layer is greater than the first reference value;

stopping the injecting of the second etchant injected to etch the (m−

d)^th one of the second-material layers and storing the recipe of the second etchant injected to etch the (m−

d)^th one of the second-material layers when the second EPD signal, representative of the amount of second etching reaction gas produced by the etching of the (m−

d)^th one of the second-material layers, is less than the second reference value;

changing the recipe of the second etchant used to etch the (m−

d)^th one of the second-material layers;

etching an (n−

d−

1)^th one of the first-material layers using the changed recipe of the first etchant; and

etching an (m−

d−

1)^th one of the second-material layers using the changed recipe of the second etchant,

wherein, when at least one of the values of the first and second EPD signals is less than the first reference value, the second process is terminated and the third process is initiated.

6. The method of claim 5, wherein the recipes of the first and second etchants include at least one of an injection time of each of the first and second etchants, an injection amount of each of the first and second etchants, and a ratio of an etching gas to a carrier gas in each of the first and second etchants.

7. The method of claim 5, wherein the third process comprises:

injecting the first etchant into the process chamber based on the functions obtained in the first and second processes to etch an (n−

k)^th one of first-material layers;

stopping the injecting of the first etchant injected to etch the (n−

k)^th one of first-material layers based on a recipe determined by the functions;

injecting the second etchant into the process chamber based on the functions obtained in the first and second processes to etch an (m−

k)^th one of the second-material layers; and

stopping the injecting of the second etchant injected to etch the (m−

k)^th one of second-material layers based on a recipe determined by the functions.

8. A method of fabricating a semiconductor device, the method comprising:

forming a stack structure including first-material layers and second-material layers alternately disposed one on another on a substrate, the first-material layers being etchable by etching gas of a first etchant, and the second-material layers being etchable by etching gas of a second etchant;

forming a mask pattern on the stack structure;

a first process of etching an upper portion of the stack structure using the mask pattern as an etch mask to form an opening through the upper portion of the stack structure,

wherein the first process comprises etching respective ones of the first- and second-material layers with the first and second etchants, respectively, generating end point detection (EPD) signals by monitoring first and second etching reaction gases resulting from the etching of said respective ones of the first- and second-material layers, determining end points of the etching of said respective ones of the first- and second-material layers with the first and second etchants from the end point detection (EPD) signals, and using the end points to discern a first set of etch recipes under which said respective ones of the first- and second-material layers have been etched;

deriving first and second functions of injection times of the first and second etchants, respectively, each with respect to a depth of the opening during the first process; and

a second process of etching a lower portion of the stack structure using the mask pattern as an etch mask to extend the opening in the upper portion of the stack structure through the lower portion of the stack structure and thereby expose the substrate,

wherein the second process comprises creating a second set of etch recipes based on the first and second functions of injection times of the first and second etchants, respectively, and etching respective ones of the first- and second-material layers in the lower portion of the stack structure under the second set of etch recipes,

whereby the etch recipes of the first set under which the first- and second-material layers of the upper portion of the stack structure are etched are respectively different from the etch recipes of the second set under which the first and second-material layers of the lower portion of the stack structure are etched,

wherein the first process comprises

injecting the first etchant into a process chamber to etch an (n−

d)^th one of the first-material layers;

comparing a value of a first EPD signal of the EPD signals generated during the etching of the (n−

d)^th one of the first-material layers with a second reference value when said value of the first EPD signal is greater than a first reference value;

stopping the injecting of the first etchant and storing an etch recipe under which the first etchant was injected when the value of the first EPD signal is less than the second reference value;

creating a new etch recipe from the etch recipe under which the first etchant was used to etch the (n−

d)^th one of the first-material layers; and

etching an (n−

d−

1)^th one of the first-material layers under the new etch recipe,

wherein the (n−

d−

1)^th one of the first-material layers is etched using a same etch recipe under which the (n−

d)^th one of the first-material layers was etched when said value of the first EPD signal generated during the etching of (n−

d)^th one of the first-material layers is greater than the second reference value.

9. The method of claim 8, wherein each of the etch recipes of the first set under which the first and second etchants are used to etch respective ones of the first and second-material layers, respectively, of the upper portion of the stack structure includes at least one of an amount of the first and second etchants used to etch a respective one of the first- and second-material layers up until the end point of the etching of the respective material layer has been determined, a time during which the first and second etchants used to etch a respective one of the material layers has been injected up until the end point of the etching of the respective material layer has been determined, and a ratio between the etching gas and a carrier gas of the first and second etchants used to etch a respective one of the material layers.

10. The method of claim 8, wherein the second process comprises:

injecting the first etchant into the process chamber under an etch recipe of the second set based on the first function to etch an (n−

k)^th one of the first-material layers, and stopping the injecting of the first etchant injected to etch the (n−

k)^th one of the first-material layers at a time determined by the first function, and

injecting the second etchant into the process chamber under an etch recipe of the second set based on the second function to etch an (m−

k)^th one of the second-material layers, and stopping the injecting of the second etchant injected to etch the (m−

k)^th one of the second-material layers at a time determined by the second function.

11. The method of claim 8, further comprising:

deriving functions of amounts of the first and second etchants injected into the process chamber with respect to the depth of the opening during the first process; and

deriving functions of amounts of the etching gases in the first and second etchants with respect to the depth of the opening during the first process.