Semiconductor device allowing metal layer routing formed directly under metal pad
First Claim
Patent Images
1. A semiconductor device, comprising:
- a metal pad, positioned in a first metal layer; and
a first specific metal layer routing, formed in a second metal layer and directly under the metal pad, wherein an oxide layer is positioned between the first metal layer and the second metal layer.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed in a second metal layer and directly under the metal pad, wherein an oxide layer is positioned between the first metal layer and the second metal layer.
18 Citations
18 Claims
-
1. A semiconductor device, comprising:
-
a metal pad, positioned in a first metal layer; and a first specific metal layer routing, formed in a second metal layer and directly under the metal pad, wherein an oxide layer is positioned between the first metal layer and the second metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
-
18. A semiconductor device, comprising:
-
a metal pad, positioned in a first metal layer; and a first specific metal layer routing and a second specific metal layer routing, formed in a second metal layer, wherein the first specific metal layer routing is directly under the metal pad and the second specific metal layer routing is not directly positioned under the metal pad, wherein an oxide layer is positioned between the first metal layer and the second metal layer.
-
Specification