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Semiconductor device

  • US 9,847,358 B2
  • Filed: 11/08/2016
  • Issued: 12/19/2017
  • Est. Priority Date: 02/07/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a first insulating film over the substrate;

    a second insulating film over the first insulating film; and

    a first transistor over the substrate, the first transistor including;

    a first gate electrode over the substrate;

    the first insulating film over the first gate electrode;

    a first oxide semiconductor film over the first insulating film, the first oxide semiconductor film overlapping with the first gate electrode;

    a third insulating film on and in direct contact with the first oxide semiconductor film;

    a second gate electrode over the third insulating film, the second gate electrode comprising a metal oxide film; and

    a first conductive film on and in direct contact with the first oxide semiconductor film through an opening in the second insulating film,wherein the second insulating film is over the first oxide semiconductor film and the second gate electrode,wherein the first oxide semiconductor film includes a first region overlapping with the second gate electrode and a second region in direct contact with the second insulating film, anda second transistor over the substrate, the second transistor including;

    a second oxide semiconductor film over the first insulating film;

    a fourth insulating film on and in direct contact with the second oxide semiconductor film;

    a third gate electrode over the fourth insulating film; and

    a second conductive film on and in direct contact with the second oxide semiconductor film through an opening in the second insulating film,wherein the second insulating film is over the second oxide semiconductor film and the third gate electrode,wherein the second oxide semiconductor film includes a first region overlapping with the third gate electrode and a second region in direct contact with the second insulating film,wherein the second region of the first transistor has a higher concentration in hydrogen than the first region of the first oxide semiconductor film, andwherein the second region of the second transistor has a higher concentration in hydrogen than the first region of the second oxide semiconductor film.

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