Solid state transducer devices with separately controlled regions, and associated systems and methods

• US 9,847,372 B2
• Filed: 12/01/2011
• Issued: 12/19/2017
• Est. Priority Date: 12/01/2011
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Rhodehouse, Robert R.
• Primary Examiner(s): Malek, Maliheh
• Application Number:
  US13/308,656
• Publication Number:
  US 20130140994A1
• Time in Patent Office: 2,210 Days
• Field of Search: 257 79, 257 88- 91, 257 94- 99, 257200, 257E33001, 257E33025, 257E33028, 257E33033-E33034, 257E33049, 257E33056-E33059, 257E33005-E33007, 257E33062-E33065, 438 22, 438 26, 438 28, 438 33- 34, 438 47
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0033 having Schottky barriers
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

Claims

1. A solid state transducer device, comprising:

a transducer structure having;

a first semiconductor material having a planar active surface;

a second semiconductor material;

a light-emitting active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region;

a first side; and

a second side facing away from the first side;

a first contact electrically connected to the first semiconductor material to direct a first electrical input to the first region along a direct, linear first path;

a second contact spaced apart from the first contact and electrically connected to the first semiconductor material to direct a second electrical input, distinct from the first electrical input, to the second region along a direct, linear second path different than the first path; and

a common third electrical contact electrically and physically connected to the second semiconductor material and electrically coupled to both the first and second regions to receive electrical current along both the first and second paths, wherein;

the first and second contacts are each separated from the third contact by the same distance, the first and second contacts are positioned on the planar active surface at the first side of the transducer structure and the transducer structure is configured to emit light from the active region through the first side of the transducer structure.

2. The device of claim 1 wherein the transducer structure is a single singulated die.

3. The device of claim 1, further comprising a substrate carrying the transducer structure.

4. The device of claim 1, further comprising a controller coupled to the first and second contacts, the controller being programmed to direct signals separately to each of the first and second contacts.

5. The device of claim 4 wherein the controller is programmed with instructions for directing signals to one of the first and second regions based at least in part on an output characteristic of the other of the first and second regions.

6. The device of claim 5 wherein the output characteristic includes an indication of heat produced by at least one of the first and second regions.

7. The device of claim 5 wherein the output characteristic includes an indication of light intensity by at least one of the first and second regions.

8. The device of claim 1 wherein the transducer structure forms at least a portion of an LED die, and wherein the first semiconductor material includes one of an n-GaN material and a p-GaN material, the second semiconductor material includes the other of the n-GaN material and the p-GaN material, and the active region includes multiple quantum wells that in turn include GaN.

9. The device of claim 1 wherein at least one of the first and second regions at least partially surrounds the other.

10. The device of claim 1 wherein the third contact is positioned on the second side of the transducer structure.

13. The device of claim 1 wherein the direct, linear first and second paths are unobstructed paths.

14. The device of claim 1 wherein at least one of the first contact and the second contact are translucent or transparent to light emitted from the active region.

11. A solid state LED system, comprising a singulated LED die having:

a first semiconductor material having a planar active surface;

a second semiconductor material;

a light-emitting active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region;

a first contact electrically connected to the first semiconductor material to direct a first electrical input to the first region along a linear, unobstructed first path;

a second contact spaced apart from the first contact and electrically connected to the first semiconductor material to direct a second electrical input, distinct from the first electrical input, to the second region along a linear, unobstructed second path different than the first path;

a common third electrical contact electrically and physically connected to the second semiconductor material and electrically coupled to both the first and second regions to receive electrical current along both the first and second paths; and

a controller coupled to the first and second contacts and configured to control the first and second electrical inputs directed to the first and second regions of the singulated LED die, wherein;

the first semiconductor material, the second semiconductor material, and the light-emitting active region define a transducer structure having a first side and a second side facing away from the first side;

the first and second contacts are each spaced apart from the third contact by the same distance;

the first and second contacts are positioned on the planar active surface at the first side of the transducer structure; and

the transducer structure is configured to emit light from the active region through the first side of the transducer structure.

12. The system of claim 11, further comprising:

a detector positioned to receive at least one of radiation and heat emitted by the die; and

a processor coupled between the detector and the first and second contacts, the processor being programmed with instructions that, when executed;

receive a signal from the detector corresponding to an operational characteristic of the LED die; and

at least in response to the signal, direct a first electrical input to the first contact at a first power level and direct a second electrical input to the second contact at a second power level different than the first.

15. A solid state transducer device, comprising:

a transducer structure having;

a first semiconductor material having a planar active surface;

a second semiconductor material;

a light-emitting active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region;

a first side; and

a second side facing away from the first side;

a first contact electrically connected to the first semiconductor material to direct a first electrical input to the first region along a direct, linear first path;

a second contact spaced apart from the first contact and electrically connected to the first semiconductor material to direct a second electrical input, distinct from the first electrical input, to the second region along a direct, linear second path different than the first path; and

a common third electrical contact electrically and physically connected and directly attached to the second semiconductor material, wherein;

the first and second contacts are positioned on the planar active surface of the transducer structure, the third electrical contact is electrically coupled to both the first and second regions to receive electrical current along both the first and second paths, and the transducer structure is configured to emit light from the active region through the first side of the transducer structure.

16. The device of claim 15 wherein the first and second contacts are each spaced apart from the third contact by the same distance.