Magnetic memory with spin device element exhibiting magnetoresistive effect
First Claim
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1. A magnetic memory, comprising:
- a deformable base plate;
at least one spin device element coupled with the deformable base plate and storing digital data-as representing a magnetization direction, a first magnetization direction being associated with a first data value and a second magnetization direction different from the first magnetization direction being associated with a second data value; and
a bending mechanism to bend the deformable base plate,wherein at least one of upper and lower surfaces of the deformable base plate faces a space which is not filled with solid substance; and
wherein the bending mechanism is configured to bend the deformable base plate with a piezoelectric effect.
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Abstract
A magnetic memory includes a deformable base plate, a spin device element coupled with the deformable base plate and storing a data as a magnetization direction, and a bending mechanism to bend the deformable base plate. At least one of upper and lower surfaces of the deformable base plate faces a space which is not filled with solid substance.
36 Citations
11 Claims
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1. A magnetic memory, comprising:
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a deformable base plate; at least one spin device element coupled with the deformable base plate and storing digital data-as representing a magnetization direction, a first magnetization direction being associated with a first data value and a second magnetization direction different from the first magnetization direction being associated with a second data value; and
a bending mechanism to bend the deformable base plate,wherein at least one of upper and lower surfaces of the deformable base plate faces a space which is not filled with solid substance; and wherein the bending mechanism is configured to bend the deformable base plate with a piezoelectric effect. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A magnetic memory comprising:
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a deformable base plate; at least one spin device element coupled with the deformable base plate and storing a data as a magnetization direction; and a bending mechanism to bend the deformable base plate, wherein at least one of upper and lower surfaces of the deformable base plate faces a space which is not filled with solid substance, wherein the bending mechanism includes a capacitor electrode, wherein the deformable base plate includes an electrode layer, wherein the capacitor electrode is opposed to the electrode layer, and wherein the bending mechanism is configured to bend the deformable base plate by using a force exerted between the capacitor electrode and the electrode layer when a voltage is applied between the capacitor electrode and the electrode layer.
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11. A semiconductor device, comprising:
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a magnetic memory; and a package incorporating the magnetic memory in an enclosing space formed in the package, wherein the magnetic memory includes;
a deformable base plate;
at least one spin device element coupled with the deformable base plate and storing a digital data representing a magnetization direction, a first magnetization direction being associated with a first data value and a second magnetization direction different from the first magnetization direction being associated with a second data value; anda bending mechanism to bend the deformable base plate, wherein the enclosed space includes such a cavity that at least one of upper and lower surfaces of the deformable base plate faces a space which is not filled with solid substance; and wherein the bending mechanism is configured to bend the deformable base plate with a piezoelectric effect.
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Specification