Display device and manufacturing method thereof

• US 9,847,386 B2
• Filed: 04/04/2017
• Issued: 12/19/2017
• Est. Priority Date: 09/20/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Osame, Mitsuaki
• Primary Examiner(s): Blum, David S
• Application Number:
  US15/478,629
• Publication Number:
  US 20170207292A1
• Time in Patent Office: 259 Days
• Field of Search: 257 66, 257751, 257784
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 1/09 Use of materials for the conductive, e.g. metallic pattern
• CPC Class Codes: H05K 5/0017 with operator interface units
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/1315 comprising structures specially adapted for lowering the resistance

Abstract

It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a display device with higher definition, represented by an EL display device and a liquid crystal display device. In the present invention, a wiring including Cu is provided as an electrode or a wiring used for the display device represented by the EL display device and the liquid crystal display device. Besides, sputtering is performed with a mask to form the wiring including Cu. With such structure, it is possible to reduce the voltage drop and a deadened signal.

Claims

1. A display device comprising:

a substrate;

a semiconductor layer over the substrate;

a gate electrode;

a gate insulating layer interposed between the gate electrode and the semiconductor layer;

a wiring over the semiconductor layer;

a first insulating layer over the wiring;

a second insulating layer comprising organic material over the first insulating layer;

a third insulating layer over the second insulating layer; and

a pixel electrode over the third insulating layer,

wherein the wiring comprises a first layer comprising titanium and a second layer comprising copper,

wherein the second layer is over the first layer,

wherein the second layer is narrower than the first layer, and

wherein a portion of a bottom surface of the first layer is in contact with the semiconductor layer.

2. The display device according to claim 1, wherein the first insulating layer comprises a silicon nitride film or a silicon oxynitride film.

3. The display device according to claim 1, wherein the organic material is any one of polyimide, acrylic, polyamide, and polyimideamide.

4. The display device according to claim 1, wherein the third insulating layer comprises a silicon nitride film or a silicon oxynitride film.

5. The display device according to claim 1, wherein the first layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

6. The display device according to claim 1, wherein the gate electrode is over the gate insulating layer.

7. A display device comprising:

a substrate;

a semiconductor layer over the substrate;

a gate electrode;

a gate insulating layer interposed between the gate electrode and the semiconductor layer;

a wiring over the semiconductor layer;

a first insulating layer over the wiring;

a second insulating layer comprising organic material over the first insulating layer;

a third insulating layer over the second insulating layer; and

a pixel electrode over the third insulating layer,

wherein the wiring comprises a first layer comprising titanium and a second layer comprising copper,

wherein the second layer is over the first layer,

wherein the second layer is narrower than the first layer,

wherein a portion of a bottom surface of the first layer is in contact with the semiconductor layer, and

wherein a portion of a top surface of the first layer is in contact with the first insulating layer.

8. The display device according to claim 7, wherein the first insulating layer comprises a silicon nitride film or a silicon oxynitride film.

9. The display device according to claim 7, wherein the organic material is any one of polyimide, acrylic, polyamide, and polyimideamide.

10. The display device according to claim 7, wherein the third insulating layer comprises a silicon nitride film or a silicon oxynitride film.

11. The display device according to claim 7, wherein the first layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

12. The display device according to claim 7, wherein the gate electrode is over the gate insulating layer.

13. A display device comprising:

a substrate;

a semiconductor layer over the substrate;

a gate electrode;

a gate insulating layer interposed between the gate electrode and the semiconductor layer;

a wiring over the semiconductor layer;

a first insulating layer over the wiring;

a second insulating layer comprising organic material over the first insulating layer;

a third insulating layer over the second insulating layer; and

a pixel electrode over the third insulating layer,

wherein the wiring comprises a first layer comprising titanium and a second layer comprising copper,

wherein the second layer is over the first layer,

wherein the second layer is narrower than the first layer,

wherein a portion of a bottom surface of the first layer is in contact with the semiconductor layer,

wherein the gate electrode comprises a third layer comprising titanium and a fourth layer comprising copper,

wherein the fourth layer is over the third layer, and

wherein the fourth layer is narrower than the third layer.

14. The display device according to claim 13, wherein the first insulating layer comprises a silicon nitride film or a silicon oxynitride film.

15. The display device according to claim 13, wherein the organic material is any one of polyimide, acrylic, polyamide, and polyimideamide.

16. The display device according to claim 13, wherein the third insulating layer comprises a silicon nitride film or a silicon oxynitride film.

17. The display device according to claim 13, wherein the first layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

18. The display device according to claim 13, wherein the third layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

19. The display device according to claim 13, wherein the gate electrode is over the gate insulating layer.

20. A display device comprising:

a substrate;

a semiconductor layer over the substrate;

a gate electrode;

a gate insulating layer interposed between the gate electrode and the semiconductor layer;

a wiring over the semiconductor layer;

a first insulating layer over the wiring;

a second insulating layer comprising organic material over the first insulating layer;

a third insulating layer over the second insulating layer; and

a pixel electrode over the third insulating layer,

wherein the wiring comprises a first layer comprising titanium and a second layer comprising copper,

wherein the second layer is over the first layer,

wherein the second layer is narrower than the first layer,

wherein a portion of a bottom surface of the first layer is in contact with the semiconductor layer,

wherein a portion of a top surface of the first layer is in contact with the first insulating layer,

wherein the gate electrode comprises a third layer comprising titanium and a fourth layer comprising copper,

wherein the fourth layer is over the third layer, and

wherein the fourth layer is narrower than the third layer.

21. The display device according to claim 20, wherein the first insulating layer comprises a silicon nitride film or a silicon oxynitride film.

22. The display device according to claim 20, wherein the organic material is any one of polyimide, acrylic, polyamide, and polyimideamide.

23. The display device according to claim 20, wherein the third insulating layer comprises a silicon nitride film or a silicon oxynitride film.

24. The display device according to claim 20, wherein the first layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

25. The display device according to claim 20, wherein the third layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

26. The display device according to claim 20, wherein the gate electrode is over the gate insulating layer.

27. A display device comprising:

a substrate;

a semiconductor layer over the substrate;

a gate electrode;

a gate insulating layer interposed between the gate electrode and the semiconductor layer;

a wiring over the semiconductor layer;

a first insulating layer over the wiring; and

a second insulating layer comprising organic material over the first insulating layer,

wherein the wiring comprises a first layer comprising titanium and a second layer comprising copper,

wherein the second layer is over the first layer,

wherein the second insulating layer comprises a rounded portion in a vertical cross-sectional view of the second insulating layer,

wherein the second layer is narrower than the first layer, and

wherein a portion of a bottom surface of the first layer is in contact with the semiconductor layer.

28. The display device according to claim 27, wherein the first insulating layer comprises a silicon nitride film or a silicon oxynitride film.

29. The display device according to claim 27, wherein the organic material is any one of polyimide, acrylic, polyamide, and polyimideamide.

30. The display device according to claim 27, wherein the first layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

31. The display device according to claim 27, wherein the gate electrode is over the gate insulating layer.

32. A display device comprising:

a substrate;

a semiconductor layer over the substrate;

a gate electrode;

a gate insulating layer interposed between the gate electrode and the semiconductor layer;

a wiring over the semiconductor layer;

a first insulating layer over the wiring; and

a second insulating layer comprising organic material over the first insulating layer,

wherein the wiring comprises a first layer comprising titanium and a second layer comprising copper,

wherein the second layer is over the first layer,

wherein the second insulating layer comprises a rounded portion in a vertical cross-sectional view of the second insulating layer,

wherein the second layer is narrower than the first layer,

wherein a portion of a bottom surface of the first layer is in contact with the semiconductor layer,

wherein a portion of a top surface of the first layer is in contact with the first insulating layer.

33. The display device according to claim 32, wherein the first insulating layer comprises a silicon nitride film or a silicon oxynitride film.

34. The display device according to claim 32, wherein the organic material is any one of polyimide, acrylic, polyamide, and polyimideamide.

35. The display device according to claim 32, wherein the first layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

36. The display device according to claim 32, wherein the gate electrode is over the gate insulating layer.

37. A display device comprising:

a substrate;

a semiconductor layer over the substrate;

a gate electrode;

a gate insulating layer interposed between the gate electrode and the semiconductor layer;

a wiring over the semiconductor layer;

a first insulating layer over the wiring; and

a second insulating layer comprising organic material over the first insulating layer,

wherein the wiring comprises a first layer comprising titanium and a second layer comprising copper,

wherein the second layer is over the first layer,

wherein the second insulating layer comprises a rounded portion in a vertical cross-sectional view of the second insulating layer,

wherein the second layer is narrower than the first layer,

wherein a portion of a bottom surface of the first layer is in contact with the semiconductor layer,

wherein the gate electrode comprises a third layer comprising titanium and a fourth layer comprising copper,

wherein the fourth layer is over the third layer, and

wherein the fourth layer is narrower than the third layer.

38. The display device according to claim 37, wherein the first insulating layer comprises a silicon nitride film or a silicon oxynitride film.

39. The display device according to claim 37, wherein the organic material is any one of polyimide, acrylic, polyamide, and polyimideamide.

40. The display device according to claim 37, wherein the first layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

41. The display device according to claim 37, wherein the third layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

42. The display device according to claim 37, wherein the gate electrode is over the gate insulating layer.

43. A display device comprising:

a substrate;

a semiconductor layer over the substrate;

a gate electrode;

a gate insulating layer interposed between the gate electrode and the semiconductor layer;

a wiring over the semiconductor layer;

a first insulating layer over the wiring; and

a second insulating layer comprising organic material over the first insulating layer,

wherein the wiring comprises a first layer comprising titanium and a second layer comprising copper,

wherein the second layer is over the first layer,

wherein the second insulating layer comprises a rounded portion in a vertical cross-sectional view of the second insulating layer,

wherein the second layer is narrower than the first layer,

wherein a portion of a bottom surface of the first layer is in contact with the semiconductor layer,

wherein a portion of a top surface of the first layer is in contact with the first insulating layer,

wherein the gate electrode comprises a third layer comprising titanium and a fourth layer comprising copper,

wherein the fourth layer is over the third layer, and

wherein the fourth layer is narrower than the third layer.

44. The display device according to claim 43, wherein the first insulating layer comprises a silicon nitride film or a silicon oxynitride film.

45. The display device according to claim 43, wherein the organic material is any one of polyimide, acrylic, polyamide, and polyimideamide.

46. The display device according to claim 43, wherein the first layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

47. The display device according to claim 43, wherein the third layer comprises a conductive film comprising titanium and a conductive barrier film comprising titanium nitride.

48. The display device according to claim 43, wherein the gate electrode is over the gate insulating layer.