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Stacked nanosheet field-effect transistor with diode isolation

  • US 9,847,391 B1
  • Filed: 04/05/2017
  • Issued: 12/19/2017
  • Est. Priority Date: 04/05/2017
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a layer stack including a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type, the first semiconductor layer arranged vertically to define a first p-n junction with the second semiconductor layer; and

    a field-effect transistor on the first semiconductor layer, the field-effect transistor including a fin with a plurality of nanosheet channel layers arranged in a vertical stack and a gate structure wrapped about the nanosheet channel layers,wherein the first p-n junction is arranged in vertical alignment with the gate structure and the nanosheet channel layers.

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