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Semiconductor device and manufacturing method thereof

  • US 9,847,396 B2
  • Filed: 03/18/2016
  • Issued: 12/19/2017
  • Est. Priority Date: 11/07/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first substrate;

    a first conductive layer over the first substrate;

    a first insulating layer over the first conductive layer;

    a second conductive layer and a third conductive layer over the first insulating layer;

    a first metal oxide layer over the second conductive layer;

    a second metal oxide layer over the third conductive layer;

    an oxide semiconductor layer over the first insulating layer, the first metal oxide layer, and the second metal oxide layer;

    a first oxide layer in contact with a side surface of the second conductive layer;

    a second oxide layer in contact with a side surface of the third conductive layer;

    a second insulating layer over the oxide semiconductor layer;

    a pixel electrode over the second insulating layer and electrically connected to the third conductive layer;

    a first alignment film over the pixel electrode;

    a liquid crystal layer over the first alignment film; and

    a second substrate over the liquid crystal layer,wherein the first metal oxide layer is between the oxide semiconductor layer and the second conductive layer,wherein the second metal oxide layer is between the oxide semiconductor layer and the third conductive layer,wherein the oxide semiconductor layer comprises indium, zinc, and oxygen,wherein the first metal oxide layer and the second metal oxide layer comprise indium, zinc, and oxygen,wherein the pixel electrode comprises indium, zinc, and oxygen, andwherein the second conductive layer and the third conductive layer comprise copper.

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