Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a first substrate;
a first conductive layer over the first substrate;
a first insulating layer over the first conductive layer;
a second conductive layer and a third conductive layer over the first insulating layer;
a first metal oxide layer over the second conductive layer;
a second metal oxide layer over the third conductive layer;
an oxide semiconductor layer over the first insulating layer, the first metal oxide layer, and the second metal oxide layer;
a first oxide layer in contact with a side surface of the second conductive layer;
a second oxide layer in contact with a side surface of the third conductive layer;
a second insulating layer over the oxide semiconductor layer;
a pixel electrode over the second insulating layer and electrically connected to the third conductive layer;
a first alignment film over the pixel electrode;
a liquid crystal layer over the first alignment film; and
a second substrate over the liquid crystal layer,wherein the first metal oxide layer is between the oxide semiconductor layer and the second conductive layer,wherein the second metal oxide layer is between the oxide semiconductor layer and the third conductive layer,wherein the oxide semiconductor layer comprises indium, zinc, and oxygen,wherein the first metal oxide layer and the second metal oxide layer comprise indium, zinc, and oxygen,wherein the pixel electrode comprises indium, zinc, and oxygen, andwherein the second conductive layer and the third conductive layer comprise copper.
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Accused Products
Abstract
A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.
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Citations
25 Claims
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1. A semiconductor device comprising:
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a first substrate; a first conductive layer over the first substrate; a first insulating layer over the first conductive layer; a second conductive layer and a third conductive layer over the first insulating layer; a first metal oxide layer over the second conductive layer; a second metal oxide layer over the third conductive layer; an oxide semiconductor layer over the first insulating layer, the first metal oxide layer, and the second metal oxide layer; a first oxide layer in contact with a side surface of the second conductive layer; a second oxide layer in contact with a side surface of the third conductive layer; a second insulating layer over the oxide semiconductor layer; a pixel electrode over the second insulating layer and electrically connected to the third conductive layer; a first alignment film over the pixel electrode; a liquid crystal layer over the first alignment film; and a second substrate over the liquid crystal layer, wherein the first metal oxide layer is between the oxide semiconductor layer and the second conductive layer, wherein the second metal oxide layer is between the oxide semiconductor layer and the third conductive layer, wherein the oxide semiconductor layer comprises indium, zinc, and oxygen, wherein the first metal oxide layer and the second metal oxide layer comprise indium, zinc, and oxygen, wherein the pixel electrode comprises indium, zinc, and oxygen, and wherein the second conductive layer and the third conductive layer comprise copper. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first substrate; a first conductive layer over the first substrate; a first insulating layer over the first conductive layer; an oxide semiconductor layer over the first insulating layer; a first metal oxide layer and a second metal oxide layer in contact with the oxide semiconductor layer; a second conductive layer in contact with the first metal oxide layer; a third conductive layer in contact with the second metal oxide layer; a first oxide layer in contact with a side surface of the second conductive layer; a second oxide layer in contact with a side surface of the third conductive layer; a second insulating layer over the oxide semiconductor layer; a pixel electrode over the second insulating layer and electrically connected to the third conductive layer; a first alignment film over the pixel electrode; a liquid crystal layer over the first alignment film; and a second substrate over the liquid crystal layer, wherein the first metal oxide layer is between the oxide semiconductor layer and the second conductive layer, wherein the second metal oxide layer is between the oxide semiconductor layer and the third conductive layer, wherein the oxide semiconductor layer comprises indium, zinc, and oxygen, wherein the first metal oxide layer and the second metal oxide layer comprise indium, zinc, and oxygen, wherein the pixel electrode comprises indium, zinc, and oxygen, and wherein the second conductive layer and the third conductive layer comprise copper. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a first substrate; a first conductive layer over the first substrate; a first insulating layer over the first conductive layer; an oxide semiconductor layer over the first insulating layer; a first metal oxide layer and a second metal oxide layer in contact with the oxide semiconductor layer; a second conductive layer in contact with the first metal oxide layer; a third conductive layer in contact with the second metal oxide layer; a first oxide layer in contact with a side surface of the second conductive layer; a second oxide layer in contact with a side surface of the third conductive layer; a second insulating layer over the oxide semiconductor layer; a pixel electrode over the second insulating layer and electrically connected to the third conductive layer; a first alignment film over the pixel electrode; a liquid crystal layer over the first alignment film; and a second substrate over the liquid crystal layer, wherein the first metal oxide layer is between the oxide semiconductor layer and the second conductive layer, wherein the second metal oxide layer is between the oxide semiconductor layer and the third conductive layer, wherein the oxide semiconductor layer comprises indium, zinc, and oxygen, wherein the first metal oxide layer and the second metal oxide layer comprise indium, zinc, and oxygen, wherein the pixel electrode comprises indium, zinc, and oxygen, wherein the second conductive layer and the third conductive layer comprise copper, and wherein each of the second conductive layer and the third conductive layer has a step in a lower portion thereof. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification