Flash memory chip processing
First Claim
1. A method for sampling a flash memory cell that belongs to a die, the method comprising:
- attempting, during a gate voltage change period, to change a value of a gate voltage of the flash memory cell from a first value to a second value;
sampling, by a sampling circuit that belongs to the die, an output signal of the flash memory cell multiple times during the voltage gate change period to provide multiple samples;
defining a given sample of the multiple samples as a data sample that represents data stored in the flash memory cell;
determining, by a processor that belongs to the die, a reliability of the data sample based on one or more samples of the multiple samples that differ from the given sample; and
determining an allocation of the flash memory cell based upon the reliability of the data sample.
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Accused Products
Abstract
According to an embodiment of the invention there may be provided a non-transitory computer readable medium that stores instructions that once executed by a computer cause the computer to sample a flash memory cell that belongs to a die, by attempting, during a gate voltage change period, to change a value of a gate voltage of the flash memory cell from a first value to a second value; sampling, by a sampling circuit that belongs to the die, an output signal of the flash memory cell multiple times during the voltage gate change period to provide multiple samples; defining a given sample of the multiple samples as a data sample that represents data stored in the flash memory cell; and determining, by a processor that belongs to the die, a reliability of the data sample based on one or more samples of the multiple samples that differ from the given sample. The processor may belong to the sampling circuit or may not belong to the sampling circuit.
325 Citations
20 Claims
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1. A method for sampling a flash memory cell that belongs to a die, the method comprising:
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attempting, during a gate voltage change period, to change a value of a gate voltage of the flash memory cell from a first value to a second value; sampling, by a sampling circuit that belongs to the die, an output signal of the flash memory cell multiple times during the voltage gate change period to provide multiple samples; defining a given sample of the multiple samples as a data sample that represents data stored in the flash memory cell; determining, by a processor that belongs to the die, a reliability of the data sample based on one or more samples of the multiple samples that differ from the given sample; and determining an allocation of the flash memory cell based upon the reliability of the data sample. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A non-transitory computer readable medium that stores instructions that once executed by a computer cause the computer to sample a flash memory cell that belongs to a die, by:
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attempting, during a gate voltage change period, to change a value of a gate voltage of the flash memory cell from a first value to a second value; sampling, by a sampling circuit that belongs to the die, an output signal of the flash memory cell multiple times during the voltage gate change period to provide multiple samples; defining a given sample of the multiple samples as a data sample that represents data stored in the flash memory cell; determining, by a processor that belongs to the die, a reliability of the data sample based on one or more samples of the multiple samples that differ from the given sample; and preventing a copyback operation when the reliability of the data sample is below a reliability threshold. - View Dependent Claims (13, 14)
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15. A semiconductor die that comprises a processor, a sampling circuit and a flash memory array;
- wherein the sampling circuit is configured to;
(a) attempt, during a gate voltage change period, to change a value of a gate voltage of the flash memory cell from a first value to a second value; (b) sample an output signal of the flash memory cell multiple times during the voltage gate change period to provide multiple samples;
wherein the processor is configured to define a given sample of the multiple samples as a data sample that represents data stored in the flash memory cell;(c) determine a reliability of the data sample based on one or more samples of the multiple samples that differ from the given sample; and (d) select between an execution of a copyback operation and a provision of the data sample to an external flash memory controller based upon the reliability of the data sample. - View Dependent Claims (16, 17)
- wherein the sampling circuit is configured to;
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18. A method for sampling a flash memory cell that belongs to a die, the method comprising:
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performing a first attempt, during a first gate voltage change period, to change a value of a gate voltage of the flash memory cell from a first value to a second value; sampling, by a sampling circuit that belongs to the die, an output signal of the flash memory cell multiple times during the first voltage gate change period to provide multiple first samples; and defining a first given sample of the first multiple samples as a first data sample that represents data stored in the flash memory cell; determining, by a processor that belongs to the die, a reliability of the first data sample based on one or more samples of the first multiple samples that differ from the first given sample; performing a second attempt, during a second gate voltage change period, to change a value of a gate voltage of the flash memory cell from a first intermediate value to a third value;
wherein the second attempt starts before a completion of the first attempt and when the gate voltage of the flash memory cell reached the first intermediate value;defining a second given sample of the second multiple samples as a second data sample that represents the data stored in the flash memory cell; determining, by the processor, a reliability of the second data sample based on one or more samples of the second multiple samples that differ from the second given sample; and preventing a copyback operation when the reliability of the first data sample or the second data sample is below a reliability threshold. - View Dependent Claims (19, 20)
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Specification