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Method for manufacturing semiconductor device

  • US 9,852,904 B2
  • Filed: 07/30/2015
  • Issued: 12/26/2017
  • Est. Priority Date: 10/17/2012
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, including the steps of:

  • forming an oxide semiconductor layer;

    forming a first conductive film over the oxide semiconductor layer;

    forming a first source electrode layer and a first drain electrode layer being in contact with the oxide semiconductor layer by a first etching that etches the first conductive film;

    forming a second conductive film over the oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer;

    forming a resist mask over the second conductive film by performing electron beam exposure;

    forming a second source electrode layer and a second drain electrode layer being in contact with the oxide semiconductor layer by a second etching that etches the second conductive film using the resist mask;

    forming a gate insulating film over the oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer;

    forming a gate electrode over the gate insulating film;

    forming a protective insulating film over the gate electrode;

    introducing oxygen into the gate insulating film through the protective insulating film; and

    supplying the oxygen of the gate insulating film to the oxide semiconductor layer.

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