Method for manufacturing semiconductor device

• US 9,852,906 B2
• Filed: 11/18/2013
• Issued: 12/26/2017
• Est. Priority Date: 06/30/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sasaki, Toshinari, Sakata, Junichiro, Ohara, Hiroki, Yamazaki, Shunpei
• Primary Examiner(s): Wilczewski, Mary
• Application Number:
  US14/082,505
• Publication Number:
  US 20140073085A1
• Time in Patent Office: 1,499 Days
• Field of Search: 438104, 438151, 438158, 438159, 438161, 438766, 438767, 257E21414
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a first oxide semiconductor layer over a substrate;

forming a second oxide semiconductor layer over the first oxide semiconductor layer;

performing dehydration or dehydrogenation on the first oxide semiconductor layer and the second oxide semiconductor layer;

forming a first conductive layer and a second conductive layer over the second oxide semiconductor layer; and

forming an oxide insulating layer over the first oxide semiconductor layer so that a carrier concentration in a part of the first oxide semiconductor layer is reduced,

wherein the steps of forming the first oxide semiconductor layer and forming the second oxide semiconductor layer are successively performed without exposure to air, and

wherein the part of the first oxide semiconductor layer does not overlap with the first conductive layer and the second conductive layer.

2. The method for manufacturing a semiconductor device according to claim 1,

wherein the first oxide semiconductor layer is formed in a first chamber, and

wherein the second oxide semiconductor layer is formed in a second chamber.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the dehydration or dehydrogenation is performed by a heat treatment under a nitrogen atmosphere so that a carrier concentration in the second oxide semiconductor layer is increased.

4. The method for manufacturing a semiconductor device according to claim 3, wherein the heat treatment is performed at 400°

C. or higher.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide insulating layer is over and in contact with the first conductive layer and the second conductive layer.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the first oxide semiconductor layer has a depression in the part of the first oxide semiconductor layer.

7. The method for manufacturing a semiconductor device according to claim 1, wherein the first oxide semiconductor layer comprises a material selected from the group consisting of an In—

Ga—

Zn—

O-based oxide semiconductor, an In—

Sn—

Zn—

O-based oxide semiconductor, an In—

Al—

Zn—

O-based oxide semiconductor, a Sn—

Ga—

Zn—

O-based oxide semiconductor, an Al—

Ga—

Zn—

O-based oxide semiconductor, a Sn—

Al—

Zn—

O-based oxide semiconductor, an In—

Zn—

O-based oxide semiconductor, an In—

Ga—

O-based oxide semiconductor, a Sn—

Zn—

O-based oxide semiconductor, an Al—

Zn—

O-based oxide semiconductor, an In—

O-based oxide semiconductor, a Sn—

O-based oxide semiconductor, and a Zn—

O-based oxide semiconductor.

8. The method for manufacturing a semiconductor device according to claim 1, wherein the second oxide semiconductor layer comprises a crystal.

9. A method for manufacturing a semiconductor device comprising the steps of:

forming a gate electrode layer over a substrate;

forming a gate insulating layer over the gate electrode layer;

forming a first oxide semiconductor layer over the gate insulating layer;

forming a second oxide semiconductor layer over the first oxide semiconductor layer;

performing dehydration or dehydrogenation on the first oxide semiconductor layer and the second oxide semiconductor layer;

forming a source electrode layer and a drain electrode layer over the second oxide semiconductor layer; and

forming an oxide insulating layer over the first oxide semiconductor layer so that a carrier concentration in a part of the first oxide semiconductor layer is reduced,

wherein the steps of forming the first oxide semiconductor layer and forming the second oxide semiconductor layer are successively performed without exposure to air, and

wherein the part of the first oxide semiconductor layer does not overlap with the source electrode layer and the drain electrode layer.

10. The method for manufacturing a semiconductor device according to claim 9,

wherein the first oxide semiconductor layer is formed in a first chamber, and

wherein the second oxide semiconductor layer is formed in a second chamber.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the dehydration or dehydrogenation is performed by a heat treatment under a nitrogen atmosphere so that a carrier concentration in the second oxide semiconductor layer is increased.

12. The method for manufacturing a semiconductor device according to claim 11, wherein the heat treatment is performed at 400°

C. or higher.

13. The method for manufacturing a semiconductor device according to claim 9, wherein the oxide insulating layer is over and in contact with the source electrode layer and the drain electrode layer.

14. The method for manufacturing a semiconductor device according to claim 9, wherein the first oxide semiconductor layer has a depression in the part of the first oxide semiconductor layer.

15. The method for manufacturing a semiconductor device according to claim 9, wherein the first oxide semiconductor layer comprises a material selected from the group consisting of an In—

Ga—

Zn—

O-based oxide semiconductor, an In—

Sn—

Zn—

O-based oxide semiconductor, an In—

Al—

Zn—

O-based oxide semiconductor, a Sn—

Ga—

Zn—

O-based oxide semiconductor, an Al—

Ga—

Zn—

O-based oxide semiconductor, a Sn—

Al—

Zn—

O-based oxide semiconductor, an In—

Zn—

O-based oxide semiconductor, an In—

Ga—

O-based oxide semiconductor, a Sn—

Zn—

O-based oxide semiconductor, an Al—

Zn—

O-based oxide semiconductor, an In—

O-based oxide semiconductor, a Sn—

O-based oxide semiconductor, and a Zn—

O-based oxide semiconductor.

16. The method for manufacturing a semiconductor device according to claim 9, wherein the second oxide semiconductor layer comprises a crystal.

17. A method for manufacturing a semiconductor device comprising the steps of:

forming a first oxide semiconductor layer over a substrate;

forming a second oxide semiconductor layer over the first oxide semiconductor layer;

performing a first treatment on the first oxide semiconductor layer and the second oxide semiconductor layer so that each of the first oxide semiconductor layer and the second oxide semiconductor layer are oxygen-deficiency type or n-type oxide semiconductor layers;

forming a first conductive layer and a second conductive layer over and in direct contact the second oxide semiconductor layer; and

performing a second treatment after forming the first conductive layer and the second conductive layer so that a part of the first oxide semiconductor layer is an oxygen-excess type or i-type oxide semiconductor layer,

wherein the steps of forming the first oxide semiconductor layer and forming the second oxide semiconductor layer are successively performed without exposure to air, and

wherein the part of the first oxide semiconductor layer is between the first conductive layer and the second conductive layer.

18. The method for manufacturing a semiconductor device according to claim 17, wherein the part of the first oxide semiconductor layer does not overlap with the first conductive layer and the second conductive layer.

19. The method for manufacturing a semiconductor device according to claim 17, wherein the first treatment is a heat treatment under a nitrogen atmosphere.

20. The method for manufacturing a semiconductor device according to claim 19, wherein the heat treatment is performed at 400°

C. or higher.

21. The method for manufacturing a semiconductor device according to claim 17, wherein the second treatment comprises forming an oxide insulating layer over the first oxide semiconductor layer.

22. The method for manufacturing a semiconductor device according to claim 21, wherein the oxide insulating layer is over and in contact with the first conductive layer and the second conductive layer.