Cobalt first layer advanced metallization for interconnects
First Claim
1. A method for fabricating an advanced metal conductor structure comprising:
- providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric for a set of metal conductor structures;
creating an adhesion promoting layer disposed over the patterned dielectric;
depositing a ruthenium metal layer disposed over the adhesion promoting layer;
using a physical vapor deposition process to deposit a cobalt layer disposed over the ruthenium layer;
performing a thermal anneal which reflows the cobalt layer to fill a first portion of the set of features leaving a second, remaining portion of the set of features unfilled, wherein the reflowed cobalt layer has a u-shaped cross-section having a thicker bottom layer than side layers; and
depositing a second metal layer to fill the second, remaining portion of the set of features, wherein the second metal is a metal other than cobalt;
wherein a thickness of the reflowed cobalt layer from the ruthenium layer to a bottom of the second metal layer and a thickness of the second metal layer after planarization are substantially equal.
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Abstract
A method for fabricating an advanced metal conductor structure is described. A pattern in a dielectric layer is provided. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is created over the patterned dielectric. A ruthenium layer is deposited over the adhesion promoting layer. Using a physical vapor deposition process, a cobalt layer is deposited over the ruthenium layer. A thermal anneal is performed which reflows the cobalt layer to fill the set of features to form a set of metal conductor structures. In another aspect of the invention, an integrated circuit device is formed using the method.
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Citations
12 Claims
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1. A method for fabricating an advanced metal conductor structure comprising:
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providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric for a set of metal conductor structures; creating an adhesion promoting layer disposed over the patterned dielectric; depositing a ruthenium metal layer disposed over the adhesion promoting layer; using a physical vapor deposition process to deposit a cobalt layer disposed over the ruthenium layer; performing a thermal anneal which reflows the cobalt layer to fill a first portion of the set of features leaving a second, remaining portion of the set of features unfilled, wherein the reflowed cobalt layer has a u-shaped cross-section having a thicker bottom layer than side layers; and depositing a second metal layer to fill the second, remaining portion of the set of features, wherein the second metal is a metal other than cobalt; wherein a thickness of the reflowed cobalt layer from the ruthenium layer to a bottom of the second metal layer and a thickness of the second metal layer after planarization are substantially equal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification