Three-dimensional memory device having integrated support and contact structures and method of making thereof
First Claim
1. A three-dimensional memory device comprising:
- an alternating stack of insulating layers and electrically conductive layers located over a substrate;
memory stack structures extending through the alternating stack, wherein each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film; and
at least one integrated support and contact structure, wherein each of the at least one integrated support and contact structure includes;
a contact via structure contacting a top surface of a respective one of the electrically conductive layers;
a tubular dielectric liner that laterally surrounds the contact via structure; and
a fin-containing dielectric pillar underlying the respective contact via structure and including a respective dielectric fin that laterally protrudes outward at each level of one or more underlying insulating layers that underlies a horizontal plane including a bottom surface of the contact via structure.
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Accused Products
Abstract
Memory openings and support openings are formed through an alternating stack of insulating layers and sacrificial material layers over a substrate. The support openings are laterally expanded by laterally recessing the insulating layers with respect to the sacrificial material layers. The laterally expanded support openings are filled with a combination of a dielectric material and a sacrificial fill material to form support pillar structures. After forming memory films and channels in the memory openings, the sacrificial material layers are replaced with electrically conductive layers while the support pillar structures provide structural support to the insulating layers. The sacrificial fill material is replaced with contact via structures to form integrated support and contact structures.
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Citations
11 Claims
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1. A three-dimensional memory device comprising:
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an alternating stack of insulating layers and electrically conductive layers located over a substrate; memory stack structures extending through the alternating stack, wherein each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film; and at least one integrated support and contact structure, wherein each of the at least one integrated support and contact structure includes; a contact via structure contacting a top surface of a respective one of the electrically conductive layers; a tubular dielectric liner that laterally surrounds the contact via structure; and a fin-containing dielectric pillar underlying the respective contact via structure and including a respective dielectric fin that laterally protrudes outward at each level of one or more underlying insulating layers that underlies a horizontal plane including a bottom surface of the contact via structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification