Method for manufacturing semiconductor device

• US 9,853,069 B2
• Filed: 06/22/2017
• Issued: 12/26/2017
• Est. Priority Date: 10/22/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Suzawa, Hideomi, Sasagawa, Shinya, Muraoka, Taiga
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): MUSTAPHA, ABDULFATTAH B
• Application Number:
  US15/629,970
• Publication Number:
  US 20170294453A1
• Time in Patent Office: 187 Days
• Field of Search: 438104-158, 438770, 257E21414
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G09G 2300/0408 Integration of the drivers onto the display substrate
• CPC Class Codes: G09G 2300/0809 Several active elements per pixel in active matrix panels
• CPC Class Codes: G09G 2310/0251 Precharge or discharge of pixel before applying new pixel voltage
• CPC Class Codes: G09G 2310/0286 Details of a shift registers arranged for use in a driving circuit
• CPC Class Codes: G09G 2310/08 Details of timing specific for flat panels, other than clock recovery
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: G09G 3/3677 suitable for active matrices only
• CPC Class Codes: G11C 19/28 using semiconductor elements G11C19/14, G11C19/36 take precedence
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer.

Claims

1. A semiconductor device comprising:

a transistor;

a terminal portion;

a first metal layer and a second metal layer, the first metal layer and the second metal layer comprising copper;

a first insulating layer over the first metal layer and the second metal layer;

an oxide semiconductor film over the first insulating layer;

a third metal layer and a fourth metal layer over the first insulating layer, the third metal layer and the fourth metal layer comprising copper;

a second insulating layer over the oxide semiconductor film, the third metal layer and the fourth metal layer; and

a pixel electrode and an electrode over the second insulating layer, wherein the pixel electrode and the electrode are transparent,

wherein the first metal layer and the second metal layer are formed by a stack of a first titanium film and a first copper film,

wherein the third metal layer is electrically connected to the oxide semiconductor film,

wherein the oxide semiconductor film comprises a channel region of the transistor,

wherein the first metal layer comprises a gate electrode of the transistor,

wherein the fourth metal layer is directly in contact with the second metal layer through a first contact hole of the first insulating layer,

wherein the pixel electrode is electrically connected to the third metal layer,

wherein the electrode is electrically connected to the second metal layer through the fourth metal layer, and

wherein the terminal portion comprises the second metal layer, the fourth metal layer, and the electrode.

2. The semiconductor device according to claim 1,

wherein the electrode is electrically connected to the fourth metal layer through a second contact hole of the second insulating layer,

wherein a location of the first contact hole is different from a location of the second contact hole.

3. The semiconductor device according to claim 1,

wherein the third metal layer covers the oxide semiconductor film and is in direct contact with one of sides edge of the oxide semiconductor film.

4. The semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises a first semiconductor layer and a second semiconductor layer,

wherein the second semiconductor layer is over the first semiconductor layer and is stacked on the first semiconductor layer.

5. The semiconductor device according to claim 4,

wherein the second semiconductor layer is not stacked on the first semiconductor layer on the channel region.

6. The semiconductor device according to claim 1,

wherein the first insulating layer comprises aluminum or tantalum.

7. The semiconductor device according to claim 1,

wherein the second insulating layer comprises aluminum or tantalum.

8. The semiconductor device according to claim 1,

wherein the third metal layer and the fourth metal layer are formed by a stack of a second titanium film and a second aluminum film.

9. A semiconductor device comprising:

a transistor;

a terminal portion;

a first metal layer and a second metal layer;

a first insulating layer over the first metal layer and the second metal layer, the first metal layer and the second metal layer comprising copper;

an oxide semiconductor film over the first insulating layer;

a third metal layer and a fourth metal layer over the first insulating layer, the third metal layer and the fourth metal layer comprising copper;

a second insulating layer over the oxide semiconductor film, the third metal layer and the fourth metal layer; and

a pixel electrode and an electrode over the second insulating layer, wherein the pixel electrode and the electrode are transparent,

wherein the first metal layer and the second metal layer are formed by a stack of a first titanium film and a first copper film,

wherein the third metal layer is electrically connected to the oxide semiconductor film,

wherein the oxide semiconductor film comprises a channel region of the transistor,

wherein the oxide semiconductor film comprises a region overlapping the third metal layer,

wherein a thickness of the channel region is thinner than the region,

wherein the first metal layer comprises a gate electrode of the transistor,

wherein the fourth metal layer is directly in contact with the second metal layer through a first contact hole of the first insulating layer,

wherein the pixel electrode is electrically connected to the third metal layer,

wherein the electrode is electrically connected to the second metal layer through the fourth metal layer, and

wherein the terminal portion comprises the second metal layer, the fourth metal layer, and the electrode.

10. The semiconductor device according to claim 9,

wherein the third metal layer covers the oxide semiconductor film and is in direct contact with one of sides edge of the oxide semiconductor film.

11. The semiconductor device according to claim 9,

wherein the oxide semiconductor film comprises a first semiconductor layer and a second semiconductor layer,

wherein the second semiconductor layer is over the first semiconductor layer and is stacked on the first semiconductor layer.

12. The semiconductor device according to claim 11,

wherein the second semiconductor layer is not stacked on the first semiconductor layer on the channel region.

13. The semiconductor device according to claim 9,

wherein the first insulating layer comprises aluminum or tantalum.

14. The semiconductor device according to claim 9, wherein the second insulating layer comprises aluminum or tantalum.

15. The semiconductor device according to claim 9,

wherein the third metal layer and the fourth metal layer is formed by a stack of a titanium film and an aluminum film.

16. A semiconductor device comprising:

a transistor;

a terminal portion;

a first metal layer and a second metal layer, the first metal layer and the second metal layer comprising copper;

a first insulating layer over the first metal layer and the second metal layer;

an oxide semiconductor film over the first insulating layer;

a third metal layer and a fourth metal layer over the first insulating layer, the third metal layer and the fourth metal layer comprising copper;

a second insulating layer over the oxide semiconductor film, the third metal layer and the fourth metal layer; and

a pixel electrode and an electrode over the second insulating layer, wherein the pixel electrode and the electrode are transparent,

wherein the first metal layer and the second metal layer are formed by a stack of a first titanium film and a first copper film,

wherein the third metal layer is electrically connected to the oxide semiconductor film,

wherein the oxide semiconductor film comprises a channel region of the transistor,

wherein the oxide semiconductor film comprises a region overlapping the third metal layer,

wherein a thickness of the channel region is thinner than the region,

wherein the second insulating layer is directly in contact with the channel region,

wherein the first metal layer comprises a gate electrode of the transistor,

wherein the fourth metal layer is directly in contact with the second metal layer through a first contact hole of the first insulating layer,

wherein the pixel electrode is electrically connected to the third metal layer,

wherein the electrode is electrically connected to the second metal layer through the fourth metal layer, and

wherein the terminal portion comprises the second metal layer, the fourth metal layer, and the electrode.

17. The semiconductor device according to claim 16,

wherein the electrode is electrically connected to the fourth metal layer through a second contact hole of the second insulating layer,

wherein a location of the first contact hole is different from a location of the second contact hole.

18. The semiconductor device according to claim 16,

wherein the oxide semiconductor film comprises a first semiconductor layer and a second semiconductor layer,

wherein the second semiconductor layer is over the first semiconductor layer and is stacked on the first semiconductor layer.

19. The semiconductor device according to claim 18,

wherein the second semiconductor layer is not stacked on the first semiconductor layer on the channel region.

20. The semiconductor device according to claim 16,

wherein the first insulating layer comprises aluminum or tantalum.

21. The semiconductor device according to claim 16,

wherein the second insulating layer comprises aluminum or tantalum.

22. The semiconductor device according to claim 16,

wherein the third metal layer and the fourth metal layer are formed by a stack of a titanium film and an aluminum film.