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Semiconductor device, electrical device system, and method of producing semiconductor device

  • US 9,853,081 B2
  • Filed: 10/03/2016
  • Issued: 12/26/2017
  • Est. Priority Date: 02/13/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first semiconductor layer;

    an insulation member layer formed on the first semiconductor layer;

    a transistor disposed in an upper portion of the insulation member layer;

    a first interlayer insulation film covering the transistor;

    a layered member including a wiring layer formed on the first interlayer insulation film and a second interlayer insulation film; and

    a first penetrating electrode penetrating through the insulation member layer, the first interlayer insulation film, and the layered member,wherein said first penetrating electrode is electrically connected only to the first semiconductor layer,said first penetrating electrode includes a first wiring formed in the wiring layer and a second wiring formed on the second interlayer insulation film, andsaid first wiring has a width smaller than that of the second wiring.

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