Imaging device and electronic apparatus

• US 9,853,085 B2
• Filed: 01/14/2015
• Issued: 12/26/2017
• Est. Priority Date: 01/21/2014
• Status: Active Grant

• Current Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Original Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Inventors: Imoto, Tsutomu, Mabuchi, Keiji
• Primary Examiner(s): Mandala, Victor A
• Assistant Examiner(s): Snow, Colleen E
• Application Number:
  US15/109,865
• Publication Number:
  US 20160329375A1
• Time in Patent Office: 1,077 Days
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14654 Blooming suppression
• CPC Class Codes: H01L 27/14656 Overflow drain structures
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 27/14812 Special geometry or disposition of pixel-elements, address lines or gate-electrodes
• CPC Class Codes: H01L 27/14887 Blooming suppression

Abstract

There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.

Claims

1. An imaging device comprising:

photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light;

an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding at least one of the photoelectric conversion regions; and

an accumulation type pixel that is provided in a position adjacent to at least one of the photovoltaic type pixels.

2. The imaging device according to claim 1, wherein the element isolation region is configured of a material that blocks diffusion of signal charge of the photovoltaic type pixels to the adjacent pixel.

3. The imaging device according to claim 1, wherein a PN junction diode is formed in the photoelectric conversion regions as a photo-sensor.

4. The imaging device according to claim 3, wherein the photovoltaic type pixel further includes a transfer gate and floating diffusion and operates as an accumulation type and photovoltaic type pixel.

5. The imaging device according to claim 4, further comprising:

an accumulation type pixel that is provided in a position adjacent to the accumulation type and photovoltaic type pixel.

6. The imaging device according to claim 3, further comprising:

an accumulation type and photovoltaic type pixel having the photoelectric conversion region, a transfer gate, and floating diffusion, wherein the photovoltaic type pixel and the accumulation type and photovoltaic type pixel are formed adjacent to each other.

7. The imaging device according to claim 1, wherein a portion between the photoelectric conversion region and a pixel circuit region in each pixel is insulated.

8. An electronic apparatus equipped with an imaging device, wherein the imaging device includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light, an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding at least one of the photoelectric conversion regions, and an accumulation type pixel that is provided in a position adjacent to at least one of the photovoltaic type pixels.

9. An imaging device comprising:

a photovoltaic type pixel having a photoelectric conversion region;

an element isolation region, wherein the element isolation region substantially surrounds the photoelectric conversion region of the photovoltaic type pixel; and

an accumulation type pixel adjacent to the photovoltaic type pixel.

10. The imaging device according to claim 9, wherein the element isolation region is configured of a material that blocks diffusion of a signal charge of the photovoltaic type pixel to the adjacent pixel.

11. The imaging device according to claim 9, wherein a PN junction diode is formed in the photoelectric conversion region as a photo-sensor.

12. The imaging device according to claim 11, wherein the photovoltaic type pixel further includes a transfer gate and a floating diffusion.

13. The imaging device according to claim 12, wherein the photovoltaic type pixel operates as an accumulation type and photovoltaic type pixel.

14. The imaging device according to claim 13, wherein the accumulation type pixel is adjacent to the accumulation type and photovoltaic type pixel.

15. The imaging device according to claim 9, further comprising:

an accumulation type and photovoltaic type pixel having the photoelectric conversion region, a transfer gate, and floating diffusion, wherein the photovoltaic type pixel and the accumulation type and photovoltaic type pixel are adjacent to each other.