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Adaptive charge balanced MOSFET techniques

  • US 9,853,140 B2
  • Filed: 12/31/2012
  • Issued: 12/26/2017
  • Est. Priority Date: 12/31/2012
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a drain region;

    a drift region disposed on the drain region;

    a plurality of body regions disposed on the drift region opposite the drain region;

    a plurality of source regions disposed on the plurality of body regions opposite the drift region;

    a plurality of gate structures, wherein each gate structure includes;

    a plurality of substantially parallel elongated gate regions extending through the plurality of source regions and the plurality of body regions and extending partially into the drift region; and

    a plurality of gate insulator regions each disposed between a respective one of the plurality of gate regions and the plurality of source regions, the plurality of body regions and the drift region; and

    a plurality of field plate structures, wherein each field plate structure is disposed through the body regions and extending into the drift region, wherein each gate structure is disposed between a set of field plate structures, and wherein each field plate structure includes;

    a plurality of field plate insulator regions;

    a plurality of field plate regions, wherein the plurality of field plate regions are interspersed between the plurality of field plate insulator regions; and

    a field ring region disposed between the plurality of field plate regions and the adjacent drift regions, and wherein regions of a set of field plates are laterally separated from the field ring region by the plurality of field plate insulator regions and other regions of the set of field plates are coupled to the field ring region;

    wherein the plurality of gate structures are adjacent the plurality of source regions, the plurality of body regions and the drift regions.

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