Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same
First Claim
1. A chemically-sensitive field effect transistor having a multi-layered structure, comprising:
- a substrate layer having an extended body;
a first insulating layer positioned above the extended body of the substrate layer;
a second insulating layer positioned above the first insulating layer;
a source electrode and a drain electrode each having a top surface and a bottom surface, the top surface separated from the bottom surface by opposing outer and inner side portions, each of the opposed side portions and each of the bottom surfaces of the source and drain electrodes being disposed within the first insulating layer, the source electrode being separated from the drain electrode by a distance;
a graphene layer positioned between the first and second insulating layers and extending between the outer side portion of the source electrode and the outer side portion of the drain electrode thereby forming a channel between the source and drain electrodes, the graphene layer contacting the top surface of the source and drain electrodes; and
a well structure provided in the second insulating layer, the well structure having a bottom surface positioned above and in contact with the graphene layer, a top surface opposed to the bottom surface, and a chamber, the chamber extending from the top surface to the bottom surface of the well structure and exposing the graphene layer within the chamber, the graphene layer forming a bottom surface of the chamber.
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Accused Products
Abstract
This invention concerns chemically-sensitive field effect transistors (FETs) are preferably fabricated using semiconductor fabrication methods on a semiconductor wafer, and in preferred embodiments, on top of an integrated circuit structure made using semiconductor fabrication methods. The instant chemically-sensitive FETs typically comprise a conductive source, a conductive drain, and a channel composed of a one-dimensional (1D) or two-dimensional (2D) transistor material, which channel extends from the source to the drain and is fabricated using semiconductor fabrication techniques on top of a wafer. Such chemically-sensitive FETs, preferably configured in independently addressable arrays, may be employed to detect a presence and/or concentration changes of various analyte types in chemical and/or biological samples, including nucleic acid hybridization and/or sequencing reactions.
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Citations
20 Claims
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1. A chemically-sensitive field effect transistor having a multi-layered structure, comprising:
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a substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer; a source electrode and a drain electrode each having a top surface and a bottom surface, the top surface separated from the bottom surface by opposing outer and inner side portions, each of the opposed side portions and each of the bottom surfaces of the source and drain electrodes being disposed within the first insulating layer, the source electrode being separated from the drain electrode by a distance; a graphene layer positioned between the first and second insulating layers and extending between the outer side portion of the source electrode and the outer side portion of the drain electrode thereby forming a channel between the source and drain electrodes, the graphene layer contacting the top surface of the source and drain electrodes; and a well structure provided in the second insulating layer, the well structure having a bottom surface positioned above and in contact with the graphene layer, a top surface opposed to the bottom surface, and a chamber, the chamber extending from the top surface to the bottom surface of the well structure and exposing the graphene layer within the chamber, the graphene layer forming a bottom surface of the chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A chemically-sensitive field effect transistor having a multi-layered structure, comprising:
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a substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a source electrode and a drain electrode positioned in the first insulating layer, the source electrode separated from the drain electrode by a channel; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a one-dimensional transistor material or a two-dimensional transistor material layer positioned between the first and second insulating layers and extending between the source and drain electrodes thereby forming a channel; and a well structure provided in the second insulating layer, the well structure having a bottom surface positioned above and in contact with the one-dimensional transistor material or two-dimensional transistor material layer, a top surface opposed to the bottom surface, and a chamber extending from the top surface to the bottom surface to expose the one-dimensional transistor material or two-dimensional transistor material layer within the chamber. - View Dependent Claims (13, 14)
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15. A chemically-sensitive field effect transistor having a multi-layered structure, comprising:
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a substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a source electrode and a drain electrode positioned in the first insulating layer, the source electrode and the drain electrode being separated by a channel; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a one-dimensional transistor material or a two-dimensional transistor material layer positioned between the first and second insulating layers and extending over the channel between the source and drain electrodes; and a well structure provided in the second insulating layer, the well structure having an opening therein, the opening defined by opposed side portions and a bottom formed by the one-dimensional transistor material or a two-dimensional transistor material layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification