Nonvolatile RAM comprising a write circuit and a read circuit operating in parallel
First Claim
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1. A nonvolatile RAM comprising:
- a memory cell array;
a first circuit being allowed to access the memory cell array in a write operation using a first pulse;
a second circuit being allowed to access the memory cell array in a read operation using a second pulse, the second circuit being allowed to operate in parallel with an operation of the first circuit; and
a write circuit selectively outputting one of a third pulse and a fourth pulse as the first pulse on the basis of a select signal,wherein a width of the first pulse is longer than a width of the second pulse.
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Abstract
According to one embodiment, a nonvolatile RAM includes a memory cell array, a first circuit being allowed to access the memory cell array in a write operation using a first pulse, and a second circuit being allowed to access the memory cell array in a read operation using a second pulse, the second circuit being allowed to operate in parallel with an operation of the first circuit. A width of the first pulse is longer than a width of the second pulse.
47 Citations
19 Claims
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1. A nonvolatile RAM comprising:
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a memory cell array; a first circuit being allowed to access the memory cell array in a write operation using a first pulse; a second circuit being allowed to access the memory cell array in a read operation using a second pulse, the second circuit being allowed to operate in parallel with an operation of the first circuit; and a write circuit selectively outputting one of a third pulse and a fourth pulse as the first pulse on the basis of a select signal, wherein a width of the first pulse is longer than a width of the second pulse. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification