Method and system for dimensional uniformity using charged particle beam lithography

• US 9,859,100 B2
• Filed: 05/17/2016
• Issued: 01/02/2018
• Est. Priority Date: 04/18/2012
• Status: Active Grant

• Current Assignee: D2S, Inc.
• Original Assignee: D2S, Inc.
• Inventors: Fujimura, Akira, Hagiwara, Kazuyuki, Pack, Robert C.
• Primary Examiner(s): IPPOLITO, NICOLE MARIE
• Application Number:
  US15/157,278
• Publication Number:
  US 20160260581A1
• Time in Patent Office: 595 Days
• Field of Search: 250396 R, 250397, 2504921, 2504922, 25049221, 25049222, 25049223, 2504923
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/78 by charged particle beam [CPB], e.g. electron beam patterning of masks
• CPC Class Codes: G03F 7/2063 for the production of exposure masks or reticles
• CPC Class Codes: H01J 2237/31762 Computer and memory organisation
• CPC Class Codes: H01J 2237/31764 Dividing into sub-patterns
• CPC Class Codes: H01J 2237/31771 using multiple exposure
• CPC Class Codes: H01J 2237/31774 Multi-beam
• CPC Class Codes: H01J 2237/31776 Shaped beam
• CPC Class Codes: H01J 37/3023 Programme control
• CPC Class Codes: H01J 37/3026 Patterning strategy
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography
• CPC Class Codes: H01J 37/3177 Multi-beam, e.g. fly's eye, comb probe

Abstract

A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

Claims

1. A method for mask process correction (MPC) or forming a reticle pattern on a resist-coated reticle, the method comprising:

inputting pattern exposure information for a charged particle beam writer, wherein the pattern exposure information is capable of forming the reticle pattern on the reticle to be used to form a wafer pattern on a substrate using optical lithography;

inputting resist exposure information for the reticle;

calculating a calculated pattern on the reticle using the pattern exposure information and the resist exposure information;

calculating a sensitivity of the wafer pattern to changes in the calculated reticle pattern, wherein the calculating is performed using a computing hardware device; and

modifying the pattern exposure information to increase the edge slope of the calculated pattern on the reticle in areas where the wafer pattern sensitivity is higher than a predetermined threshold.

2. The method of claim 1 wherein the charged particle beam writer is a shaped beam charged particle beam writer, and wherein the charged particle beam exposure information comprises a plurality of shots for the shaped beam charged particle beam writer.

3. The method of claim 2 wherein the modifying comprises generating a shot which overlaps another shot in the plurality of shots.

4. The method of claim 1 wherein the charged particle beam writer is a multi-beam charged particle beam system, and wherein the charged particle beam exposure information comprises exposure instructions for the multi-beam charged particle beam exposure system.

5. The method of claim 1, further comprising forming the reticle pattern on the reticle with the modified pattern exposure information and the charged particle beam writer.

6. The method of claim 1 wherein the modifying comprises increasing dosage delivered to the reticle near the perimeter of the reticle pattern.

7. The method of claim 1 wherein the calculating the calculated pattern on the reticle comprises charged particle beam simulation.

8. A system for mask process correction, the system comprising:

a device configured to input pattern exposure information for a charged particle beam writer, wherein the pattern exposure information is capable of forming a reticle pattern on a reticle to be used to form a wafer pattern on a substrate using optical lithography;

a device configured to input resist exposure information;

a device configured to calculate a calculated reticle pattern from the pattern exposure information and the resist exposure information;

a device configured to calculate a sensitivity of the wafer pattern to changes in the calculated reticle pattern; and

a device configured to modify the pattern exposure information in areas of the pattern where the calculated sensitivity is higher than a predetermined threshold.

9. The system of claim 8 wherein the device configured to modify increases dosage delivered to the reticle near the perimeter of the reticle pattern.

10. The system of claim 8 wherein the device configured to calculate a calculated reticle pattern performs charged particle beam simulation.

11. The system of claim 8 wherein the charged particle beam writer is a shaped beam charged particle beam writer, and wherein the charged particle beam exposure information comprises a plurality of shots for the shaped beam charged particle beam writer.

12. The system of claim 11 wherein the device configured to modify generates a shot which overlaps another shot in the plurality of shots.