Oxide semiconductor device with an oxygen-controlling insulating layer
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor layer in which a channel formation region of a transistor is localized;
a gate electrode layer over the oxide semiconductor layer and overlapping with the oxide semiconductor layer;
a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode layer; and
a first insulating layer on and in contact with a part of an upper surface of the oxide semiconductor layer, a side surface of the gate insulating layer and a side surface of the gate electrode layer,wherein the gate insulating layer includes an oxygen-excess region,wherein the first insulating layer has a lower oxygen-transmitting property than the gate insulating layer, andwherein the first insulating layer has a thickness greater than or equal to 5 nm and less than or equal to 10 nm.
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Accused Products
Abstract
Provided is a highly reliable semiconductor device which includes a transistor including an oxide semiconductor. The semiconductor device includes an oxide semiconductor layer; a gate insulating layer provided over the oxide semiconductor layer; a gate electrode layer overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween; an insulating layer being in contact with part of an upper surface of the oxide semiconductor layer, covering a side surface of the gate insulating layer and a side surface and an upper surface of the gate electrode layer, and having a lower oxygen-transmitting property than the gate insulating layer; a sidewall insulating layer provided on the side surface of the gate electrode layer with the insulating layer provided therebetween; a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer.
131 Citations
19 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer in which a channel formation region of a transistor is localized; a gate electrode layer over the oxide semiconductor layer and overlapping with the oxide semiconductor layer; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode layer; and a first insulating layer on and in contact with a part of an upper surface of the oxide semiconductor layer, a side surface of the gate insulating layer and a side surface of the gate electrode layer, wherein the gate insulating layer includes an oxygen-excess region, wherein the first insulating layer has a lower oxygen-transmitting property than the gate insulating layer, and wherein the first insulating layer has a thickness greater than or equal to 5 nm and less than or equal to 10 nm. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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an oxide semiconductor layer in which a channel formation region of a transistor is localized; a gate electrode layer over the oxide semiconductor layer and overlapping with the oxide semiconductor layer; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode layer; a first insulating layer on and in contact with a part of an upper surface of the oxide semiconductor layer, a side surface of the gate insulating layer and a side surface and an upper surface of the gate electrode layer; and a second insulating layer on the side surface of the first insulating layer, wherein side end portions of the first insulating layer are aligned with side end portions of the second insulating layer, wherein the gate insulating layer includes an oxygen-excess region, wherein the first insulating layer has a lower oxygen-transmitting property than the gate insulating layer, and wherein the first insulating layer has a thickness greater than or equal to 5 nm and less than or equal to 10 nm. - View Dependent Claims (5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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an oxide semiconductor layer which is non-single-crystal and includes a crystalline component, and in which a channel formation region of a transistor is localized; a gate electrode layer over the oxide semiconductor layer and overlapping with the oxide semiconductor layer; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode layer; a first insulating layer on and in contact with a part of an upper surface of the oxide semiconductor layer, a side surface of the gate insulating layer and a side surface and an upper surface of the gate electrode layer; and a second insulating layer on the side surface of the first insulating layer, wherein side end portions of the first insulating layer are aligned with side end portions of the second insulating layer, wherein the gate insulating layer includes an oxygen-excess region, wherein the first insulating layer has a lower oxygen-transmitting property than the gate insulating layer, and wherein the first insulating layer has a thickness greater than or equal to 5 nm and less than or equal to 10 nm. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification