Selective film deposition method to form air gaps
First Claim
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1. A method of forming an air gap for a semiconductor device through selective deposition comprising:
- providing a substrate for processing in a reaction chamber;
providing a first surface overlying the substrate for selectively depositing a film, wherein the first surface comprises a first vertical portion;
providing a second surface overlying the substrate, wherein the second surface comprises a second vertical portion; and
selectively depositing the film at least on the first vertical portion of the first surface;
wherein the second surface differs from the first surface and wherein deposition of the film is selective on first surface relative to deposition of the film on the second surface,wherein selectively depositing the film defines in part an air gap, andwherein the step of selectively depositing the film comprises;
pulsing a metal halide precursor on the first vertical portion;
pulsing an oxygen precursor on the first vertical portion; and
repeating the pulsing steps until the film grows to a desired thickness.
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Abstract
A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.
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Citations
19 Claims
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1. A method of forming an air gap for a semiconductor device through selective deposition comprising:
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providing a substrate for processing in a reaction chamber; providing a first surface overlying the substrate for selectively depositing a film, wherein the first surface comprises a first vertical portion; providing a second surface overlying the substrate, wherein the second surface comprises a second vertical portion; and selectively depositing the film at least on the first vertical portion of the first surface; wherein the second surface differs from the first surface and wherein deposition of the film is selective on first surface relative to deposition of the film on the second surface, wherein selectively depositing the film defines in part an air gap, and wherein the step of selectively depositing the film comprises; pulsing a metal halide precursor on the first vertical portion; pulsing an oxygen precursor on the first vertical portion; and repeating the pulsing steps until the film grows to a desired thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification