Cobalt first layer advanced metallization for interconnects
First Claim
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1. An integrated circuit device comprising:
- a substrate including a dielectric layer patterned with a pattern includes a set of features in the dielectric for a set of metal conductor structures;
an adhesion promoting layer disposed over the set of features in the patterned dielectric;
a ruthenium layer disposed over the adhesion promoting layer;
a cobalt layer disposed over the ruthenium layer filling a first portion of the set of features, wherein the cobalt layer is formed using a physical vapor deposition process;
a metal layer disposed over the cobalt layer filling a second portion of the set of features; and
a RuCo alloy layer disposed between the ruthenium layer and the cobalt layer.
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Abstract
An advanced metal conductor structure is described. An integrated circuit device includes a substrate having a patterned dielectric layer. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is disposed over the set of features in the patterned dielectric. A ruthenium layer is disposed over the adhesion promoting layer. A cobalt layer is disposed over the ruthenium layer filling a first portion of the set of features. The cobalt layer is formed using a physical vapor deposition process. A metal layer is disposed over the cobalt layer filling a second portion of the set of features.
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Citations
10 Claims
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1. An integrated circuit device comprising:
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a substrate including a dielectric layer patterned with a pattern includes a set of features in the dielectric for a set of metal conductor structures; an adhesion promoting layer disposed over the set of features in the patterned dielectric; a ruthenium layer disposed over the adhesion promoting layer; a cobalt layer disposed over the ruthenium layer filling a first portion of the set of features, wherein the cobalt layer is formed using a physical vapor deposition process; a metal layer disposed over the cobalt layer filling a second portion of the set of features; and a RuCo alloy layer disposed between the ruthenium layer and the cobalt layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification