×

Cobalt first layer advanced metallization for interconnects

  • US 9,859,155 B1
  • Filed: 01/23/2017
  • Issued: 01/02/2018
  • Est. Priority Date: 08/17/2016
  • Status: Active Grant
First Claim
Patent Images

1. An integrated circuit device comprising:

  • a substrate including a dielectric layer patterned with a pattern includes a set of features in the dielectric for a set of metal conductor structures;

    an adhesion promoting layer disposed over the set of features in the patterned dielectric;

    a ruthenium layer disposed over the adhesion promoting layer;

    a cobalt layer disposed over the ruthenium layer filling a first portion of the set of features, wherein the cobalt layer is formed using a physical vapor deposition process;

    a metal layer disposed over the cobalt layer filling a second portion of the set of features; and

    a RuCo alloy layer disposed between the ruthenium layer and the cobalt layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×