Formation of advanced interconnects
First Claim
1. A method for fabricating an advanced metal conductor structure comprising:
- providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric for a set of metal conductor structures;
creating an adhesion promoting layer disposed over the patterned dielectric;
depositing a ruthenium metal layer disposed over the adhesion promoting layer;
using a physical vapor deposition process to deposit a cobalt layer disposed over the ruthenium metal layer; and
performing a thermal anneal which reflows the cobalt layer to fill the set of features to form a set of metal conductor structures;
wherein the thermal anneal is carried out in a temperature below 300 Centigrade and the ruthenium metal layer and the cobalt layer forms a Ru/Co interface and the ruthenium metal layer is disposed over and bonded to the adhesion promoting layer.
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Accused Products
Abstract
A method for fabricating an advanced metal conductor structure is described. A pattern in a dielectric layer is provided. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is created over the patterned dielectric. A ruthenium layer is deposited over the adhesion promoting layer. Using a physical vapor deposition process, a cobalt layer is deposited over the ruthenium layer. A thermal anneal is performed which reflows the cobalt layer to fill the set of features to form a set of metal conductor structures. In another aspect of the invention, an integrated circuit device is formed using the method.
71 Citations
14 Claims
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1. A method for fabricating an advanced metal conductor structure comprising:
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providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric for a set of metal conductor structures; creating an adhesion promoting layer disposed over the patterned dielectric; depositing a ruthenium metal layer disposed over the adhesion promoting layer; using a physical vapor deposition process to deposit a cobalt layer disposed over the ruthenium metal layer; and performing a thermal anneal which reflows the cobalt layer to fill the set of features to form a set of metal conductor structures; wherein the thermal anneal is carried out in a temperature below 300 Centigrade and the ruthenium metal layer and the cobalt layer forms a Ru/Co interface and the ruthenium metal layer is disposed over and bonded to the adhesion promoting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for fabricating an advanced metal conductor structure comprising:
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providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric for a set of metal conductor structures; creating an adhesion promoting layer disposed over the patterned dielectric; depositing a ruthenium metal layer disposed over the adhesion promoting layer; using a physical vapor deposition process to deposit a cobalt layer disposed over the ruthenium metal layer; and performing a thermal anneal which reflows the cobalt layer to fill the set of features to form a set of metal conductor structures; wherein the adhesion promoting layer is a nitrogen enriched layer formed in the patterned dielectric produced by a nitridation process and wherein the thermal anneal is carried out in a temperature below 300 Centigrade and the ruthenium metal layer and the cobalt layer forms a Ru/Co interface and the ruthenium metal layer is disposed over and bonded to the nitrogen enriched layer formed in the patterned dielectric.
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Specification